Specific Process Knowledge/Thin Film deposition/ALD/TiO2 deposition using ALD: Difference between revisions

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The ALD window for titanium dioxide (TiO<sub>2</sub>) ranges from 120 <sup>o</sup>C to 350 <sup>o</sup>C.  
The ALD window for titanium dioxide (TiO<sub>2</sub>) ranges from 120 <sup>o</sup>C to 350 <sup>o</sup>C.  


A low temperatures between 120 <sup>o</sup>C and 150 <sup>o</sup>C an anatase TiO<sub>2</sub> layer is grow in the ALD, and at higher temperatures between 300 <sup>o</sup>C and 350 <sup>o</sup>C and amorphous TiO<sub>2</sub> layer is grown in the ALD. At temperatures between 150 <sup>o</sup>C and 300 <sup>o</sup>C the TiO<sub>2</sub> layer will be a mixture of both anatase and amorphous TiO<sub>2</sub>.
A low temperatures between 120 <sup>o</sup>C and 150 <sup>o</sup>C an amorphous TiO<sub>2</sub> layer is grown in the ALD, and at higher temperatures between 300 <sup>o</sup>C and 350 <sup>o</sup>C an anatase TiO<sub>2</sub> layer is grown. At temperatures between 150 <sup>o</sup>C and 300 <sup>o</sup>C the TiO<sub>2</sub> layer will be a mixture of both amorphous and anatase TiO<sub>2</sub>.


SEM images of both anatase and amorphous TiO<sub>2</sub> are shown below.  
For Si wafers, amorphous TiO<sub>2</sub> is best grown on wafers with native oxide, and anatase TiO<sub>2</sub> is best grown on wafers without native oxide (removed using HF).


For Si wafers, anatase TiO<sub>2</sub> is best grown wafers without native oxide (do an BHF etch), and amorphous TiO<sub>2</sub> is best grown on wafers with native oxide.


XPS measurements shows that at temperaturs below 120 <sup>o</sup>C the TiO<sub>2</sub> layer will be contaminated with about 1-3 % chlorine molecules from the TiCl<sub>4</sub> precursor.
All results shown on this page have been obtained using the "TiO2" recipe on new Si(100) wafers with native oxide:


====TiO<sub>2</sub> standard recipe====


<b>Recipe</b>: TiO2
<b>Recipe</b>: TiO2


<b>Temperature</b>: 150 <sup>o</sup>C - 350 <sup>o</sup>C
<b>Temperature</b>: 120 <sup>o</sup>C - 350 <sup>o</sup>C


{| border="2" cellspacing="2" cellpadding="5"  align="none"
{| border="2" cellspacing="2" cellpadding="5"  align="none"
|-  
|-  
|
|
!TMA
!TiCl<sub>4</sub>
!H<sub>2</sub>O
!H<sub>2</sub>O
|-
|-
Line 40: Line 33:
|-  
|-  
!Purge time
!Purge time
|3.0 s
|4.0 s
|4.0 s
|5.0 s
|-
|-
|}
|}




====TiO<sub>2</sub> deposition rates====


In the graphs below the TiO<sub>2</sub> thickness as function of number of cycles for deposition temperatures between 150 <sup>o</sup>C and 350 <sup>o</sup>C can be seen. From the equations the number of cycles required for a certain thickess can be calculated.  
In the graphs below the TiO<sub>2</sub> thickness as function of the number of cycles for deposition temperatures between 150 <sup>o</sup>C and 350 <sup>o</sup>C can be seen. From the equations the number of cycles required for a certain thickess to be deposited can be calculated. All results have been obtained for Si wafers with native oxide. 


<gallery caption="Titanium oxide thickness as function of number of cycles" widths="220px" heights="220px" perrow="5">
<gallery caption="Titanium dioxide thickness as function of number of cycles" widths="300px" heights="300px" perrow="3">
image:ALD_TiO2_grow_rate_150C.jpg| Temperature 150 <sup>o</sup>C.
image:ALD_TiO2_grow_rate_150C.jpg| Temperature 150 <sup>o</sup>C.
image:ALD_TiO2_grow_rate_250C.jpg| Temperature 200 <sup>o</sup>C.
image:ALD_TiO2_grow_rate_250C.jpg| Temperature 250 <sup>o</sup>C.
image:ALD_TiO2_grow_rate_350C.jpg| Temperature 250 <sup>o</sup>C.
image:ALD_TiO2_grow_rate_350C.jpg| Temperature 350 <sup>o</sup>C.
</gallery>
</gallery>


Below some SEM images of anatase TiO<sub>2</sub> deposited on trenches are shown.
Evgeniy Shkondin, DTU Danchip, April-May 2014.
 
 
====TiO<sub>2</sub> results====


<gallery caption="Anatase TiO<sub>2</sub> deposited on a Si sample with trenches. Temperature = 120 <sup>o</sup>C, number of cycles = 500. Trench width = 200 nm, trench depth = 4 \mum, i.e. the aspect ratio is 1:20. It is seen that the TiO<sub>2</sub> covrets the trenches very well" widths="250px" heights="250px" perrow="5">
Some some SEM images of TiO<sub>2</sub> deposited on a Si surface at different temperatures between 150 <sup>o</sup>C and 350 <sup>o</sup>C are shown below. Some of samples have been treated with HF (hydrofluoric acid) to remove the native oxide layer just before the ALD deposition.
image:ALD Al2O3 grow rate 150C.jpg| Temperature 150 <sup>o</sup>C.
 
image:ALD Al2O3 grow rate 200C.jpg| Temperature 200 <sup>o</sup>C.
<gallery caption="Titanium dioxide deposited at different temperatures on a Si surface" widths="250px" heights="180px" perrow="3">
image:ALD Al2O3 grow rate 250C.jpg| Temperature 250 <sup>o</sup>C.
image:TiO2 150C 1200 cycles Si_HF_treated.jpg| Temperature 150 <sup>o</sup>C, 1200 cycles, HF treated.
image:ALD Al2O3 grow rate 200C.jpg| Temperature 300 <sup>o</sup>C.
image:TiO2 150C 1200 cycles Si_untreated.jpg| Temperature 150 <sup>o</sup>C, 1200 cycles.
image:ALD Al2O3 grow rate 350C.jpg| Temperature 350 <sup>o</sup>C.
image:TiO2 250C 750cycles_Si_untreated.jpg| Temperature 250 <sup>o</sup>C, 750 cycles.
</gallery>
</gallery>
<gallery caption="" widths="250px" heights="180px" perrow="5">
image:TiO2 1000 cycles 300C Si_HF.jpg| Temperature 300 <sup>o</sup>C, 1000 cycles, HF treated.
image:TiO2 1000 cycles 300C Si_un.jpg| Temperature 300 <sup>o</sup>C, 1000 cycles.
image:TiO2 350C 1250 cycles Si_HF_treated.jpg| Temperature 350 <sup>o</sup>C, 1250 cycles, HF treated.
</gallery>
XPS measurements of TiO<sub>2</sub> deposited at 120 <sup>o</sup>C and 300 <sup>o</sup>C are shown below. From the XPS measurements it can be calculated that at temperatures below 120 <sup>o</sup>C the TiO<sub>2</sub> layer will be contaminated with about 1-3 % chlorine molecules from the TiCl<sub>4</sub> precursor. This can be also seen as small white dots in the SEM image of the amorphous TiO<sub>2</sub> layers above.


Below some SEM images of amorphous TiO<sub>2</sub> deposited on trenches are shown 
[[image:XPS_TiO2.jpg|320x320px|left|thumb|XPS measurements of titanium dioxide.]]


<gallery caption="Amorphous TiO<sub>2</sub> deposited a Si sample with trenches. Temperature = 350 <sup>o</sup>C, number of cycles = 500. Trench width = 200 nm, trench depth = 4 \mum, i.e. the aspect ratio is 1:20. It is seen that the TiO<sub>2</sub> covrets the trenches very well" widths="250px" heights="250px" perrow="5">
<br clear="all" />  
image:ALD Al2O3 grow rate 150C.jpg| Temperature 150 <sup>o</sup>C.
image:ALD Al2O3 grow rate 200C.jpg| Temperature 200 <sup>o</sup>C.
image:ALD Al2O3 grow rate 250C.jpg| Temperature 250 <sup>o</sup>C.
image:ALD Al2O3 grow rate 200C.jpg| Temperature 300 <sup>o</sup>C.
image:ALD Al2O3 grow rate 350C.jpg| Temperature 350 <sup>o</sup>C.
</gallery>


Evgeniy Shkondin, DTU Danchip, 2014.
Evgeniy Shkondin, DTU Danchip, 2014.
====TiO<sub>2</sub> deposition on trenches====
For TiO<sub>2</sub> deposition on trenches more information can be found here:
*[[Specific Process Knowledge/Thin Film deposition/ALD/TiO2 deposition using ALD/TiO2 deposition on trenches using ALD|TiO<sub>2</sub> deposition on trenches using ALD]]

Latest revision as of 10:27, 19 June 2023

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The ALD window for titanium dioxide (TiO2) ranges from 120 oC to 350 oC.

A low temperatures between 120 oC and 150 oC an amorphous TiO2 layer is grown in the ALD, and at higher temperatures between 300 oC and 350 oC an anatase TiO2 layer is grown. At temperatures between 150 oC and 300 oC the TiO2 layer will be a mixture of both amorphous and anatase TiO2.

For Si wafers, amorphous TiO2 is best grown on wafers with native oxide, and anatase TiO2 is best grown on wafers without native oxide (removed using HF).


TiO2 standard recipe

Recipe: TiO2

Temperature: 120 oC - 350 oC

TiCl4 H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.1 s 0.1 s
Purge time 4.0 s 5.0 s


TiO2 deposition rates

In the graphs below the TiO2 thickness as function of the number of cycles for deposition temperatures between 150 oC and 350 oC can be seen. From the equations the number of cycles required for a certain thickess to be deposited can be calculated. All results have been obtained for Si wafers with native oxide.

Evgeniy Shkondin, DTU Danchip, April-May 2014.


TiO2 results

Some some SEM images of TiO2 deposited on a Si surface at different temperatures between 150 oC and 350 oC are shown below. Some of samples have been treated with HF (hydrofluoric acid) to remove the native oxide layer just before the ALD deposition.

XPS measurements of TiO2 deposited at 120 oC and 300 oC are shown below. From the XPS measurements it can be calculated that at temperatures below 120 oC the TiO2 layer will be contaminated with about 1-3 % chlorine molecules from the TiCl4 precursor. This can be also seen as small white dots in the SEM image of the amorphous TiO2 layers above.

XPS measurements of titanium dioxide.


Evgeniy Shkondin, DTU Danchip, 2014.


TiO2 deposition on trenches

For TiO2 deposition on trenches more information can be found here: