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== Silicon sputter==
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.labadviser.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Si_sputter_in_Wordentec click here]'''


Silicon can be deposited in [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec.]]
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>


= Silicon sputtering in the Wordentec=


'''Parameters'''
Silicon can be sputter deposited in the [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]] as well as in the [[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]] (details on sputtering Si in the Sputter-System Lesker [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker|here]]) and in the new [[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Cluster Lesker]] (results [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Metal-Oxide(PC1)|here]] and [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Metal-Oxide(PC3)|here]]).


Listed below are tried parameters, that can be used during deposition. Use the rates as a start value, and make a test to be sure that you get the right thickness.


==Parameters==


Listed below are tried parameters, that can be used during Si deposition in the Wordentec. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness.


Please don´t use higher power then 180W, since the target then could breake into a lot of small pieces.
'''Do not use the power more than 180 W without consulting staff''', since the Si target could break into a lot of small pieces.  


{| border="1" cellspacing="0" cellpadding="4"  
{| border="1" cellspacing="0" cellpadding="4"  
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|-
|-
| Sputter pressure
| Sputter pressure
| 5*10<sup>-2</sup>
| 5*10<sup>-3</sup> mbar
| 1*10<sup>-2</sup>
| 1*10<sup>-2</sup> mbar


|-
|-
| Rate
| Rate
| About 0,7Å/s  
| About 0.7 Å/s  
| About 0,6Å/s  
| About 0.6 Å/s  
|-
|-
|}
|}
In November 2018 Rebecca Ettlinger and Patama Pholprasit tested Si sputter deposition in the Wordentec at '''500 W with a low sputter pressure of 2*10<sup>-3</sup> mbar''' together with Yannick Seis. The aim was a better uniformity of the sputtered film. See details in the [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&machid=167 Wordentec Process log].
It is thus possible to use a higher power together with a lower pressure, but please do not do this without consulting the [[mailto:thinfilm@nanolab.dtu.dk Thin Film group]].
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Si_sputter_in_Wordentec"