Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec: Difference between revisions
New page: == Silicon sputter== Silicon can be deposited in Wordentec. '''Parameters''' Listed below are tried parameters, that can ... |
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= Silicon sputtering in the Wordentec= | |||
Silicon can be sputter deposited in the [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]] as well as in the [[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]] (details on sputtering Si in the Sputter-System Lesker [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker|here]]) and in the new [[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Cluster Lesker]] (results [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Metal-Oxide(PC1)|here]] and [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Metal-Oxide(PC3)|here]]). | |||
==Parameters== | |||
Listed below are tried parameters, that can be used during Si deposition in the Wordentec. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness. | |||
'''Do not use the power more than 180 W without consulting staff''', since the Si target could break into a lot of small pieces. | |||
{| border="1" cellspacing="0" cellpadding="4" | {| border="1" cellspacing="0" cellpadding="4" | ||
! | ! | ||
! | ! Settings 1 | ||
! Settings 2 | |||
|- | |- | ||
| Process type | | Process type | ||
|Sputtering | |Sputtering | ||
|Sputtering | |||
|- | |- | ||
| Power | | Power | ||
| | |130W | ||
| | |170W | ||
|- | |- | ||
| Sputter pressure | | Sputter pressure | ||
| | | 5*10<sup>-3</sup> mbar | ||
| 1*10<sup>-2</sup> mbar | |||
|- | |- | ||
| Rate | | Rate | ||
| About 0 | | About 0.7 Å/s | ||
| About 0.6 Å/s | |||
|- | |- | ||
|} | |} | ||
In November 2018 Rebecca Ettlinger and Patama Pholprasit tested Si sputter deposition in the Wordentec at '''500 W with a low sputter pressure of 2*10<sup>-3</sup> mbar''' together with Yannick Seis. The aim was a better uniformity of the sputtered film. See details in the [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&machid=167 Wordentec Process log]. | |||
It is thus possible to use a higher power together with a lower pressure, but please do not do this without consulting the [[mailto:thinfilm@nanolab.dtu.dk Thin Film group]]. | |||