Specific Process Knowledge/Lithography/EBeamLithography/RaithElphy: Difference between revisions

Latest revision as of 13:52, 10 May 2023

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Manual

OBSOLETE! This tool does not exist at DTU Nanolab any longer.

Manual for Raith Elphy

Technical Information

The Raith computer is located right next to the LEO SEM pc

The Raith Elphy system is located in the cleanroom in the F2 room, where the SEM LEO lies. The tool is integrated with the LEO microscope, but is partially controlled through a dedicated PC.

For an overview on the SEM imaging capabilities (often relevant during patterning as well), refer to the general SEM page.

For information regarding patterning, see comparison table available here.

Getting started

To request an e-beam training session, contact e-beam@nanolab.dtu.dk; a DTU Nanolab personnel will hereafter provide a time slot. Users require 2 training sessions before being allowed full access to the machine. Please be sure to fulfill all requirements (see below) when asking for training on this equipment.

For other/general inquiries regarding this equipment, you can contact directly Lean Pedersen.

Before you request for a training on the machine, fulfill the following steps:

Be trained on the following machines:

(Contact Training to obtain missing items)

SEM LEO. The Raith e-beam exposure is performed through the LEO microscope. Operating the microscope for regular imaging is always the first step in the patterning process. Being able to navigate the SEM software and to obtain high quality images will come handy to avoid spending hours without good results. If you have no previous SEM experience, you may need to be trained and get practice on a different instrument before moving to the LEO, so plan ahead.
Spinner and Developer tools according to your process flow.

Create your layout:

Prepare your pattern using a layout software (L-edit, CleWin, CAD) and export that to GDS format. Check your GDS-file by importing it in e.g. CleWin or L-edit.
Additional functionality (e.g. single shot lines/points, dose modulation, etc.) can be obtained using directly the editor inside the Raith Elphy software. After the first training, it can be useful to prepare and/or test the layout directly in this proprietary editor.
If you are unsure of the patterning parameters to use, include test structures (shape, dimension) in your layout to identify optimal parameters according to the desired resolution.

Gather Experience

As mentioned before, the more experienced you are with imaging on the LEO, the more successful your patterning sessions will be. Get acquainted with the microscope software before sitting there for your exposures.
Try consulting a fully trained colleague of yours, and consider assisting him/her when she or he e-beam writes, to gather as much knowledge as possible about your desired e-beam process, e.g. which acceleration voltage, working distance, doses, are typically used.
Study the manual for the machine, available here

Prepare a process flow

Describe your entire process in a process flow. The process flow should include all information such as type and thickness of resist, size and type of substrate, which processes are to be done before and after e-beam writing. Find process flow templates here. Attach your process flow to your request for training.
For the Raith tool, DTU Nanolab expects users to perform process development by themselves. All the users are welcome to contribute to the shared knowledge by sharing their recipes, but no quality check or default recipes are available for this machine.

General Rules

All General Rules applicable to the SEM LEO apply to the RaithElphy as well.

To use the e-beam writer, simply book the SEM LEO via LabManager, as you would do for SEM imaging.

When your session is over and you log out, remember to register in the logbook the Raith Session ("yes"), sample (substrate and resist), and acceleration voltage. You can use the comment section to annotate any process detail you may want to have registered, or other remarks e.g. unexpected behavior of the tool.

If you can't use your booking, or you are deleting one, please always remember to send an email to "Cleanroomuser-list (DCH)" to make other users aware they can use the tool.

Samples

Detail of the holder, with the 3 clips and the Faraday cup position highlighted.

The default holder can fit only chips, up to 3, with sizes of approximately 1 x 1 cm² each. The maximum available area is approximately 2.3 x 3 cm².

If needed, a larger chip or wafer can be mounted on a holder without a Faraday's cup, which could add some difficulty to your patterning process.

@@ Line 1: / Line 1: @@
+{{cc-nanolab}}
-'''Feedback to this page''': '''[mailto:e-beam@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography click here]'''
+'''Feedback to this page''': '''[mailto:e-beam@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/EBeamLithography/RaithElphy click here]'''
+==Manual==
+'''OBSOLETE! This tool does not exist at DTU Nanolab any longer.'''
-<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|100px]]
-==Manual==
 [[Specific_Process_Knowledge/Lithography/EBeamLithography/RaithElphyManual|Manual for Raith Elphy]]
 == Technical Information==
-For an overview on the SEM imaging capabilities (often relevant during patterning as well), see [[Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy]]
+[[File:RaithPC.jpg|thumb|300x300px|The Raith computer is located right next to the LEO SEM pc]]
-For information regarding patterning, see comparison table at [[Specific_Process_Knowledge/Lithography/EBeamLithography]]
+The Raith Elphy system is located in the cleanroom in the F2 room, where the SEM LEO lies. The tool is integrated with the LEO microscope, but is partially controlled through a dedicated PC.
+For an overview on the SEM imaging capabilities (often relevant during patterning as well), refer to the [[Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy|general SEM page]].
+For information regarding patterning, see comparison table available [[Specific_Process_Knowledge/Lithography/EBeamLithography|here]].
 == Getting started ==
-*To request an e-beam training session, contact [mailto:e-beam@danchip.dtu.dk e-beam@danchip.dtu.dk]; a DTU Danchip personnel will hereafter provide a time slot. Users require '''2 training sessions''' before being allowed full access to the machine. '''Please be sure to fulfill all requirements (see below) when asking for training on this equipment.'''
+*To request an e-beam training session, contact [mailto:e-beam@nanolab.dtu.dk e-beam@nanolab.dtu.dk]; a DTU Nanolab personnel will hereafter provide a time slot. Users require '''2 training sessions''' before being allowed full access to the machine. '''Please be sure to fulfill all requirements (see below) when asking for training on this equipment.'''
-*For other/general inquiries regarding this equipment, you can contact directly [mailto:wiltid@dtu.dk William Tiddi].
+*For other/general inquiries regarding this equipment, you can contact directly [mailto:lgpe@dtu.dk Lean Pedersen].
@@ Line 25: / Line 29: @@
 '''Be trained on the following machines:'''
-''(Contact [mailto:training@danchip.dtu.dk Training] to obtain those missing)''
+''(Contact [mailto:training@nanolab.dtu.dk Training] to obtain missing items)''
-# SEM LEO. The Raith e-beam exposure is performed through the LEO microscope. Operating the microscope for regular imaging is always the first step in the patterning process. Being able to navigate the SEM software and to obtain high quality images will come handy to avoid spending hours without good results. If you have no previous SEM experience, you may need to be trained and get practice on a different instrument before moving to the LEO, so plan ahead.
+# [[Specific Process Knowledge/Characterization/SEM LEO|SEM LEO]]. The Raith e-beam exposure is performed through the LEO microscope. Operating the microscope for regular imaging is always the first step in the patterning process. Being able to navigate the SEM software and to obtain high quality images will come handy to avoid spending hours without good results. If you have no previous SEM experience, you may need to be trained and get practice on a different instrument before moving to the LEO, so plan ahead.
-#
+# Spinner and Developer tools according to your process flow.
-'''Create sdf and jdf-files:'''
+'''Create your layout:'''
-# Prepare your pattern using a layout software (L-edit, CleWin, CAD) and export that to GDS format. Check your GDS-file by importing it in e.g. <span class="plainlinks">[http://www.wieweb.com/ns6/index.html CleWin]</span> or L-edit. In order to reach the files from the computers inside the cleanroom it is recommended to either dropbox them or send them per email to yourself.
+# Prepare your pattern using a layout software (L-edit, CleWin, CAD) and export that to GDS format. Check your GDS-file by importing it in e.g. <span class="plainlinks">[http://www.wieweb.com/ns6/index.html CleWin]</span> or L-edit.
-# Convert the GDS file to v30 using BEAMER; a manual for BEAMER software is found [[Specific_Process_Knowledge/Lithography/EBeamLithography/BEAMER|here]]
+# Additional functionality (e.g. single shot lines/points, dose modulation, etc.) can be obtained using directly the editor inside the Raith Elphy software. After the first training, it can be useful to prepare and/or test the layout directly in this proprietary editor.
+# If you are unsure of the patterning parameters to use, include test structures (shape, dimension) in your layout to identify optimal parameters according to the desired resolution.
-#download [http://download.cnet.com/SuperEdi/3000-2352_4-10291091.html SuperEdi],
-#read the sdf and jdf-file manual found [[Specific_Process_Knowledge/Lithography/EBeamLithography/FilePreparation|here]],
-#find templates of sdf and jdf files on the cleanroom drive in the folder E-beam sdf and jdf templates.
 ''' Gather Experience '''
-#Assist a fully trained colleague of yours when she or he e-beam writes, gather as much knowledge about your e-beam run, i.e. which e-beam current, aperture and dose to use, which shot pitch (e.g. SHOT A,10).
+# As mentioned before, the more experienced you are with imaging on the LEO, the more successful your patterning sessions will be. Get acquainted with the microscope software before sitting there for your exposures.
-# Study the logbook for the e-beam writer: sheet 1 gives you an overview of which condition files (currents and apertures) have been in use recently by which user on which type of resist. On sheet 2 in this logbook you can find a writing time estimation program.
+# Try consulting a fully trained colleague of yours, and consider assisting him/her when she or he e-beam writes, to gather as much knowledge as possible about your desired e-beam process, e.g. which acceleration voltage, working distance, doses, are typically used.
-# Study the manual for the machine, it can be found [[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual|here]]
+# Study the manual for the machine, available [[Specific_Process_Knowledge/Lithography/EBeamLithography/RaithElphyManual|here]]
 ''' Prepare a process flow'''
 #Describe your entire process in a process flow. The process flow should include all information such as type and thickness of resist, size and type of substrate, which processes are to be done before and after e-beam writing. Find process flow templates [[Specific_Process_Knowledge/Lithography/EBeamLithography#E-beam_resists_and_Process_Flows | here]]. '''Attach your process flow to your request for training.'''
+# For the Raith tool, DTU Nanolab expects users to perform process development by themselves. All the users are welcome to contribute to the shared knowledge by sharing their recipes, but no quality check or default recipes are available for this machine.
 <br clear="all" />
@@ Line 53: / Line 54: @@
 == General Rules ==
-For safety reasons, even fully trained users are only authorized to mount substrates into the e-beam cassettes, but not authorized to load the cassettes into the autoloader.
+All General Rules applicable to the SEM LEO apply to the RaithElphy as well.
-To use the e-beam writer, book the machine via LabManager, '''note the number and type of substrate as well as the condition file to be used in the 'Public Comment:' field in LabManager'''. Mount your substrate in the cassette and pre-align if necessary. Call for help from DTU Danchip staff to load your cassette into the robot loader (the autoloader).
-After your exposure, fully trained users can unload their cassettes from the autoloader, unmount their substrates and re-load an '''empty''' cassette into the autoloader.
+To use the e-beam writer, simply book the SEM LEO via LabManager, as you would do for SEM imaging.
-If you are unable to unmount your substrates before another user requires the cassette, you must accept that either the next user or DTU Danchip personel unmount your substrates.
-== Cassettes ==
+*When your session is over and you log out, remember to register in the logbook the Raith Session ("yes"), sample (substrate and resist), and acceleration voltage. You can use the comment section to annotate any process detail you may want to have registered, or other remarks e.g. unexpected behavior of the tool.
-Some cassettes are made of Aluminum, others of Titanium. The thermal expansion coefficient of Ti is much lower than of Al; bear this in mind if you have crucial patterns to expose.
+*If you can't use your booking, or you are deleting one, please always remember to send an email to "Cleanroomuser-list (DCH)" to make other users aware they can use the tool.
-'''Keep''' an eye on the wafer orientation when you mount; the 2" aluminum cassette still have wafer orientation flat-up.
+== Samples ==
+[[File:RaithHolder.jpg|thumb|200x200px|The Raith sample holder for EBL.|left]]
+[[File:RaithHolderDetail.jpg|thumb|200x200px|Detail of the holder, with the 3 clips and the Faraday cup position highlighted.]]
-{| cellpadding="2" style="border: 2px solid darkgray;" align="right"
+The default holder can fit only chips, up to 3, with sizes of approximately 1 x 1 cm<sup>2</sup> each. The maximum available area is approximately 2.3 x 3 cm<sup>2</sup>.
-! width="250" |
-! width="250" |
-! width="250" |
-! width="250" |
-! width="250" |
-|- border="0"
-| [[File:IMG_0239.jpg|150px]]
-|[[File:IMG_6440.jpg|150px]] [[File:IMG_6441.jpg|150px]]
-| [[File:IMG_6433.jpg|150px]]  [[File:IMG_6434.jpg|150px]]
-| [[File:IMG_6436.jpg|150px]] [[File:IMG_6437.jpg|150px]]
-|[[File:IMG_6438.jpg|150px]]  [[File:IMG_6439.jpg|150px]]
-|- align="center"
-| chip Al/Cu cassette with slot widths of 20 mm, 12 mm, 8 mm and 4 mm || 2" Ti cassette; wafer orientation is flat-down || 2" Al cassette; wafer orientation is flat-up || 4" Ti cassette; wafer orientation is flat-down || 4" Al cassette; wafer orientation is flat-down
-|}
+If needed, a larger chip or wafer can be mounted on a holder without a Faraday's cup, which could add some difficulty to your patterning process.
 <br><br>
-== Design of global marks and chip marks ==
-If you need to align an exposure to an existing pattern on a wafer you need wafer marks (or global marks) to align your exposure to. This requires global marks and chip marks on the wafer, optimization of gain settings of backscattered electron detector ('''ACGRG'''), and execution of subprograms that detects global marks and chip marks ('''SETWFR''' and '''CHIPAL'''). The subprograms are discussed in details in the manual.
-'''Please note that manual alignment (using the SEM) is not allowed.''' You should use semi-automatic alignment only. In rare cases where semi-automatic alignment is impossible, you should remove the resist around the wafer marks before loading the wafer/chip into the machine.
-{| cellpadding="2" style="border: 2px solid darkgray;" align="right"
-! width="200" |
-! width="200" |
-! width="250" |
-! width="300" |
-|- border="0"  align="center"
-| [[File:mark example2.png|100px]]
-| [[File:GlobalMark.png|120px]]
-| [[File:P Q marks and chip marks.png|250px]]
-| [[File:Chip example.png|150px]]
-|- align="center"
-| Definition of length and width of global mark, use L = 500-1000 µm, W 3-5 µm || Text around mark is '''not''' recommended || Fabricate 2 - 3 P and Q marks. Place the P marks on the left side of the wafer and Q marks to the right. Do not place the marks closer than 15 mm to the edges of the wafer.|| Example of chip with 4 chip marks. Always position the chip marks outside the chip pattern. Position of chip marks are entered in jdf file using chip coordinate system, i.e. center of chip is (0,0).
-|}
-'''1 Material:'''
-Global marks or chip marks should be clearly visible in a 100keV SEM, i.e. preferably defined by Ti/Au or another 'heavy' metal, alternatively the wafer marks should be etched. In Si, etched mark should be around 1 µm deep in order to be detectable by the machine. Shallow etched (even 200 nm etched profiles) global marks or global marks in Si or marks defined by a light metal as Al can be hard to locate manually as well as automatically by the machine.
-'''2 Design: '''
-* Global marks: You need at least two wafer marks, a P mark and a Q mark. It is recommended to have many P and Q marks available on the wafer to choose from. The x-coordinate of the P mark should be smaller than the x-coordinate of the Q mark. The global marks should either be crosses or L-shaped, they should be as narrow as possible and 500 - 1000 microns in length. If the wafer contains a number of identical marks, the marks should be marked in order to identify the 'right' alignment mark (the scan width of the SEM is 1 mm x 1 mm). Text around the wafer mark is NOT recommended. Wafer marks formed as crosses with lengths of 1000 microns and 3-5 microns in width are recommended.
-* Chip marks: Prepare 1 or 4 chip marks on every chip. The chip marks can be smaller than global marks, as only very fine alignment is performed with chip marks. The chip marks should either be crosses or L-shaped and text around the marks is NOT recommended.
-<br>