Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/ORE with Al2O3 mask: Difference between revisions
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In these samples, the hard mask, Al<sub>2</sub>O<sub>3</sub>, was coated in 150 mm Si wafers using the ALD 1 tool. These sets of samples also had the lithography process done in the DUV stepper to deposit 65 nm of BARC and 750 nm of DUV resist. Three different patterns were created after the development: | In these samples, the hard mask, Al<sub>2</sub>O<sub>3</sub>, was coated in 150 mm Si wafers using the ALD 1 tool. These sets of samples also had the lithography process done in the DUV stepper to deposit 65 nm of BARC and 750 nm of DUV resist. Three different patterns were created after the development: | ||
# 1 µm width pillars with 1 µm pitch (50 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV). | # 1 µm width pillars with 1 µm pitch (50 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV resist). | ||
# 1 µm width holes with 1 µm pitch (50 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV). | # 1 µm width holes with 1 µm pitch (50 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV resist). | ||
# 200 nm width nanoholes with 400 nm pitch (100 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV). | # 200 nm width nanoholes with 400 nm pitch (100 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV resist). | ||
The Si / Al<sub>2</sub>O<sub>3</sub> / BARC / DUV stack was first processed in Pegasus 2 to etch the BARC layer (recipe named ''"barc gentle etch"'', ER=5.42nm/min), and the alumina was etched in the III-V ICP, using a BCl<sub>3</sub> / Ar recipe, which has an ER = 0.45 nm/min. With the pillars and holes samples, the BARC was also etched for 12 min on Pegasus 2, followed by 90 minutes on the III-V ICP. <br> | The Si / Al<sub>2</sub>O<sub>3</sub> / BARC / DUV stack was first processed in Pegasus 2 to etch the BARC layer (recipe named ''"barc gentle etch"'', ER=5.42nm/min), and the alumina was etched in the III-V ICP, using a BCl<sub>3</sub> / Ar recipe, which has an ER = 0.45 nm/min. With the pillars and holes samples, the BARC was also etched for 12 min on Pegasus 2, followed by 90 minutes on the III-V ICP. <br> | ||
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| ''' 1 µm holes''' || [[File:bitmapddddd.jpg|300px]] [[File:holes.tif.jpg|300px]] || Visible that after the 90 min Al<sub>2</sub>O<sub>3</sub> etch, the mask was correctly etched away confirmed by reaching the silicon (etched ~16nm of it). | | ''' 1 µm holes''' || [[File:bitmapddddd.jpg|300px]] [[File:holes.tif.jpg|300px]] || Visible that after the 90 min Al<sub>2</sub>O<sub>3</sub> etch, the mask was correctly etched away confirmed by reaching the silicon (etched ~16nm of it). | ||
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| '''200nm nanoholes''' || [[File:nanoHoles 0g 02 v3.jpg|300px]] [[File:nanoHoles 0g 05 v2.jpg|300px]] || Visible that after the | | '''200nm nanoholes''' || [[File:nanoHoles 0g 02 v3.jpg|300px]] [[File:nanoHoles 0g 05 v2.jpg|300px]] || Visible that after the 260 min Al<sub>2</sub>O<sub>3</sub> etch, the mask was correctly etched away confirmed by reaching the silicon (etched ~20nm of it). Resist visible on top of the mask since it was etched during the ORE process. | ||
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= | ==Previous work on Peg2== | ||
*[https://run.unl.pt/bitstream/10362/152030/1/Farinha_2022.pdf SF6/O2 Plasma Etching: Optimizing the CORE process and going into 3D Engineering_November22 by Maria Farinha@DTU Nanolab] | |||