Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/ORE with Al2O3 mask: Difference between revisions
No edit summary |
|||
| (11 intermediate revisions by the same user not shown) | |||
| Line 11: | Line 11: | ||
In these samples, the hard mask, Al<sub>2</sub>O<sub>3</sub>, was coated in 150 mm Si wafers using the ALD 1 tool. These sets of samples also had the lithography process done in the DUV stepper to deposit 65 nm of BARC and 750 nm of DUV resist. Three different patterns were created after the development: | In these samples, the hard mask, Al<sub>2</sub>O<sub>3</sub>, was coated in 150 mm Si wafers using the ALD 1 tool. These sets of samples also had the lithography process done in the DUV stepper to deposit 65 nm of BARC and 750 nm of DUV resist. Three different patterns were created after the development: | ||
# 1 µm width pillars with 1 µm pitch (50 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV). | # 1 µm width pillars with 1 µm pitch (50 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV resist). | ||
# 1 µm width holes with 1 µm pitch (50 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV). | # 1 µm width holes with 1 µm pitch (50 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV resist). | ||
# 200 nm width nanoholes with 400 nm pitch (100 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV). | # 200 nm width nanoholes with 400 nm pitch (100 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV resist). | ||
The Si / Al<sub>2</sub>O<sub>3</sub> / BARC / DUV stack was first processed in Pegasus 2 to etch the BARC layer (recipe named ''"barc gentle etch"'', ER=5.42nm/min), and the alumina was etched in the III-V ICP, using a BCl<sub>3</sub> / Ar recipe, which has an ER = 0.45 nm/min. With the pillars and holes samples, the BARC was also etched for 12 min on Pegasus 2, followed by 90 minutes on the III-V ICP. <br> | The Si / Al<sub>2</sub>O<sub>3</sub> / BARC / DUV stack was first processed in Pegasus 2 to etch the BARC layer (recipe named ''"barc gentle etch"'', ER=5.42nm/min), and the alumina was etched in the III-V ICP, using a BCl<sub>3</sub> / Ar recipe, which has an ER = 0.45 nm/min. With the pillars and holes samples, the BARC was also etched for 12 min on Pegasus 2, followed by 90 minutes on the III-V ICP. <br> | ||
| Line 29: | Line 29: | ||
| ''' 1 µm holes''' || [[File:bitmapddddd.jpg|300px]] [[File:holes.tif.jpg|300px]] || Visible that after the 90 min Al<sub>2</sub>O<sub>3</sub> etch, the mask was correctly etched away confirmed by reaching the silicon (etched ~16nm of it). | | ''' 1 µm holes''' || [[File:bitmapddddd.jpg|300px]] [[File:holes.tif.jpg|300px]] || Visible that after the 90 min Al<sub>2</sub>O<sub>3</sub> etch, the mask was correctly etched away confirmed by reaching the silicon (etched ~16nm of it). | ||
|- | |- | ||
| '''200nm nanoholes''' || [[File:nanoHoles 0g 02 v3.jpg|300px]] [[File:nanoHoles 0g 05 v2.jpg|300px]] || Visible that after the | | '''200nm nanoholes''' || [[File:nanoHoles 0g 02 v3.jpg|300px]] [[File:nanoHoles 0g 05 v2.jpg|300px]] || Visible that after the 260 min Al<sub>2</sub>O<sub>3</sub> etch, the mask was correctly etched away confirmed by reaching the silicon (etched ~20nm of it). Resist visible on top of the mask since it was etched during the ORE process. | ||
|} | |} | ||
| Line 97: | Line 97: | ||
=== Nanoholes === | === Nanoholes === | ||
The nanoholes are 200nm wide, with 400nm pitch with 100 nm Al<sub>2</sub>O<sub>3</sub> mask. During the recipe, Pegasus 2 conditions were: Outer EM=10A, T=20°C, no clamping, no He BGC and all heaters OFF. The removal power was varied, and the achieved ER | The nanoholes are 200nm wide, with 400nm pitch with 100 nm Al<sub>2</sub>O<sub>3</sub> mask. During the recipe, Pegasus 2 conditions were: Outer EM=10A, T=20°C, no clamping, no He BGC and all heaters OFF. The removal power was varied, and the achieved ER for 40W was 48.5 nm/min. | ||
<br clear="all" /> | <br clear="all" /> | ||
<br clear="all" /> | <br clear="all" /> | ||
| Line 133: | Line 133: | ||
| '''R-step''' || 10 || 100% || 0 || 40 || 40 | | '''R-step''' || 10 || 100% || 0 || 40 || 40 | ||
|- | |- | ||
| '''E<sub>1</sub>-step''' || 2 || 220 mTorr || 0 || 350 || | | '''E<sub>1</sub>-step''' || 2 || 220 mTorr || 0 || 350 || 0 | ||
|- | |- | ||
| '''E<sub>2</sub>-step''' || * || 220 mTorr || 0 || 350 || 300 | | '''E<sub>2</sub>-step''' || * || 220 mTorr || 0 || 350 || 100-300 | ||
|} ''*The E<sub>2</sub>-time value was changed and observed.'' | |} ''*The E<sub>2</sub>-time value was changed and observed.'' | ||
<br clear="all" /> | <br clear="all" /> | ||
Regarding the measurements of the profiles, in a) the depth reached 3.17 µm with 0-15s of ramping, b) reached 3.21 µm with 1-15s of ramping, c) reached 2.87 µm whit 5-15s of ramping and d) reached 3.63 µm with 15 s without ramping. Even though the etching ramping times may appear similar, | Regarding the measurements of the profiles, in a) the depth reached 3.17 µm with 0-15s of ramping, b) reached 3.21 µm with 1-15s of ramping, c) reached 2.87 µm whit 5-15s of ramping and d) reached 3.63 µm with 15 s without ramping. Even though the etching ramping times may appear similar, there are differences in the feature profile. The ER for 0-15s and 1-15s is around 52 nm/min and for 5-15s and 15s is approximately 48 nm/min. | ||
<br clear="all" /> | <br clear="all" /> | ||
| Line 227: | Line 227: | ||
< | <br clear="all" /> | ||
==Previous work on Peg2== | |||
*[https://run.unl.pt/bitstream/10362/152030/1/Farinha_2022.pdf SF6/O2 Plasma Etching: Optimizing the CORE process and going into 3D Engineering_November22 by Maria Farinha@DTU Nanolab] | |||