Specific Process Knowledge/Etch/III-V ICP/SiO2: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/III-V_ICP/SiO2 click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/III-V_ICP/SiO2 click here]''' <br>
{{CC-bghe1}}


=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=


{| border="2" cellspacing="2" cellpadding="3"  
{| border="2" cellspacing="2" cellpadding="3"  
|-style="background:Gray; color:White"
|-style="background:Gray; color:White"
!Parameter
!Parameter
!Resist mask
!Parameter settings
|-
|-
|Coil Power [W]
|Coil Power [W]
|800
|200
|-
|-
|Platen Power [W]
|Platen Power [W]
|100
|25
|-
|-
|Platen temperature [<sup>o</sup>C]
|Platen temperature [<sup>o</sup>C]
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|-
|-
|CF<sub>4</sub> flow [sccm]
|CF<sub>4</sub> flow [sccm]
|30
|20
|-
|-
|H<sub>2</sub> flow [sccm]
|H<sub>2</sub> flow [sccm]
Line 24: Line 24:
|-
|-
|Pressure [mTorr]
|Pressure [mTorr]
|4
|3
|-
|-
|}
|}
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|-style="background:Black; color:White"
|-style="background:Black; color:White"
!Results  
!Results  
!Test on wafer with 50% load (Travka 50), by BGHE @danchip
!SiO2 Etch Slow ''Test by Artem Shikin @ Fotonik''
|-
|-
|Etch rate of PECVD BPSG
|Etch rate of PECVD BPSG
|'''39.4nm/min (22-01-2016)'''  
|'''39.4nm/min (22-01-2016)'''
|-
|Etch rate in thermal oxide
|
'''48nm/min''' (bghe 17-01-2017)- whole 4" wafer with capton tape <br>
'''40-50 nm/min''' bghe (2019-2021 5 tests)
|-
|-
|Selectivity to  resist [:1]
|Selectivity to  resist [:1]
|Not known
|Not known
|-
|Etch rate in silicon
|
bghe@Nanolab 20190117
*35 nm/min (middle of the wafers with 80% load)
*36 nm/min (edge of the wafers with 80% load)
|-
|-
|Wafer uniformity (100mm)
|Wafer uniformity (100mm)
|Not known
|+-0.4%-0.8% ((max-min)/2*Average) (bghe 2019-2021 5 tests)
|-
|-
|Profile [<sup>o</sup>]
|Profile [<sup>o</sup>]
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|-
|-
|Comment
|Comment
|
|Tested on a plane BPSG layer. The etch rate is much lower for an etch time of e.g. 5s
|-
|-
|}
|}

Latest revision as of 10:19, 24 March 2023

Feedback to this page: click here
This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated


Parameter Parameter settings
Coil Power [W] 200
Platen Power [W] 25
Platen temperature [oC] 20
CF4 flow [sccm] 20
H2 flow [sccm] 10
Pressure [mTorr] 3


Results SiO2 Etch Slow Test by Artem Shikin @ Fotonik
Etch rate of PECVD BPSG 39.4nm/min (22-01-2016)
Etch rate in thermal oxide

48nm/min (bghe 17-01-2017)- whole 4" wafer with capton tape
40-50 nm/min bghe (2019-2021 5 tests)

Selectivity to resist [:1] Not known
Etch rate in silicon

bghe@Nanolab 20190117

  • 35 nm/min (middle of the wafers with 80% load)
  • 36 nm/min (edge of the wafers with 80% load)
Wafer uniformity (100mm)
-0.4%-0.8% ((max-min)/2*Average) (bghe 2019-2021 5 tests)
Profile [o] Not known
Wafer uniformity map (click on the image to view a larger image) Not known
SEM profile images NONE
Comment Tested on a plane BPSG layer. The etch rate is much lower for an etch time of e.g. 5s
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