Specific Process Knowledge/Etch/ICP Metal Etcher/silicon nitride: Difference between revisions
No edit summary |
No edit summary |
||
| (9 intermediate revisions by 2 users not shown) | |||
| Line 1: | Line 1: | ||
===Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess == | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon_nitride click here]''' | ||
This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented. | <br> {{CC1}} | ||
==Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess == | |||
{{CC-bghe2}} <br> | |||
This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented. The same recipe is being used for SiO2, see the result for that [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide#Slow etch of SiO2 with resist as masking material-using a 6.22 carrier wafer with recess|here]] | |||
{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" | ||
!Parameter | !Parameter | ||
! | !A slow etch with carrier | ||
|- | |- | ||
|Coil Power [W] | |Coil Power [W] | ||
| Line 30: | Line 36: | ||
!Results | !Results | ||
!Test on wafer with 20% load, ''by Izzet Yildiz @Nanotech'' | !Test on wafer with 20% load, ''by Izzet Yildiz @Nanotech'' | ||
!Test by BGHE @nanolab | |||
|- | |- | ||
|Etch rate of LPCVD nitride | |Etch rate of LPCVD nitride | ||
|'''60-65 nm/min (20% etch load) (Feb. 2014)''' | |'''60-65 nm/min (20% etch load) (Feb. 2014)''' | ||
| | |||
|- | |- | ||
|Selectivity to resist [SiN : AZ resist] | |Selectivity to resist [SiN : AZ resist] | ||
|'''1:0.75''' | |'''1:0.75''' | ||
| | |||
|- | |- | ||
|Wafer uniformity (100mm) | |Wafer uniformity (100mm) | ||
|'''?''' | |'''?''' | ||
| | |||
|- | |- | ||
|Profile [<sup>o</sup>] | |Profile [<sup>o</sup>] | ||
|? | |? | ||
| | |||
|- | |- | ||
|Wafer uniformity map (click on the image to view a larger image) | |Wafer uniformity map (click on the image to view a larger image) | ||
|not measured | |not measured | ||
| | |||
|- | |- | ||
|SEM profile images | |SEM profile images | ||
|Not measured | |Not measured | ||
| | |||
|- | |||
|Etch rate in Barc | |||
| | |||
|~50 nm/min (Date: 2014-09-09) | |||
|- | |||
|Etch rate in KRF resist | |||
| | |||
|~40 nm/min (Date: 2014-09-09) | |||
|- | |- | ||
|} | |} | ||
<br/> | <br/> | ||
Latest revision as of 16:02, 6 February 2023
Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal
Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess
Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab
This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented. The same recipe is being used for SiO2, see the result for that here
| Parameter | A slow etch with carrier |
|---|---|
| Coil Power [W] | 200 |
| Platen Power [W] | 25 |
| Platen temperature [oC] | 0 |
| CF4 flow [sccm] | 20 |
| H2 flow [sccm] | 10 |
| Pressure [mTorr] | 3 |
| Results | Test on wafer with 20% load, by Izzet Yildiz @Nanotech | Test by BGHE @nanolab |
|---|---|---|
| Etch rate of LPCVD nitride | 60-65 nm/min (20% etch load) (Feb. 2014) | |
| Selectivity to resist [SiN : AZ resist] | 1:0.75 | |
| Wafer uniformity (100mm) | ? | |
| Profile [o] | ? | |
| Wafer uniformity map (click on the image to view a larger image) | not measured | |
| SEM profile images | Not measured | |
| Etch rate in Barc | ~50 nm/min (Date: 2014-09-09) | |
| Etch rate in KRF resist | ~40 nm/min (Date: 2014-09-09) |