Specific Process Knowledge/Etch/Etching of Polymer: Difference between revisions

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<!-- Link to the process info page in LabAdviser -->
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*[[Specific Process Knowledge/Photolithography/Stripping equipment#Plasma_asher_1|Plasma asher 1]]
*[[Specific Process Knowledge/Lithography/Strip#Plasma_Asher_1|Plasma asher 1]]
<!-- Link to the process info page in LabAvdiser -->
<!-- Link to the process info page in LabAvdiser -->


*[[Specific Process Knowledge/Photolithography/Stripping equipment#Plasma_asher_2|Plasma asher 2]]
*[[Specific Process Knowledge/Lithography/Strip#Plasma_Asher_2|Plasma asher 2]]


*[[/Etch of Photo Resist using RIE|Etch of Photo Resist using RIE]]


*[[Specific Process Knowledge/Etch/Wet Polymer Etch|Wet Polymer Etch]]




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!
!
![[Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch)|ASE]]
![[Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch)|ASE]]
![[Specific Process Knowledge/Photolithography/Stripping equipment#Plasma_asher_1|Plasma asher 1]]
![[Specific Process Knowledge/Lithography/Strip#Plasma_Asher_1|Plasma asher 1]]
![[Specific Process Knowledge/Photolithography/Stripping equipment#Plasma_asher_2|Plasma asher 2]]
![[Specific Process Knowledge/Lithography/Strip#Plasma_Asher_2|Plasma asher 2]]
![[Specific Process Knowledge/Etch/RIE (Reactive Ion Etch)|RIE2]]
!Wet Polymer stripping
![[Specific Process Knowledge/Etch/Wet Polymer Etch|Wet Polymer Etch]]
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|-


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|The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers.   
|The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers.   
|The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers. This plasma asher is for Si wafers without metals.
|The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers. This plasma asher is for Si wafers without metals.
|RIE2 can etch polymers in almost the same way as the ASE. We prefer the you use the ASE but there can be situations where the sample will not be allowed in the ASE (e.g. if there are metal on). If you think you need to use the RIE2 for polymer etching you need to get a special permission from the plasma group, see contact info on the RIE2 page in LabManager.
|Wet polymer etching is used for stripping a resist/polymer when it is no longer needed. E.g. removing resist masks.
|Wet polymer etching is used for stripping a resist/polymer when it is no longer needed. E.g. removing resist masks.
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|-
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Isotropic
Isotropic
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|
Process dependent: <br>
Dissolves the polymer
Almost isotropic to anisotropic (vertical to sample surface)
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Isotropic
|-
|-


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*Oxygen plasma
*Oxygen plasma
*Oxygen plasma mixed with
*Oxygen plasma mixed with
**CO<sub>2</sub>
**SF<sub>6</sub>
**SF<sub>6</sub>
**CF<sub>4</sub>
**Ar
**Ar
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|
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**N<sub>2</sub>
**N<sub>2</sub>
|
|
*Oxygen plasma
*The different solvents available at Nanolab, such as  
*Oxygen plasma mixed with
**CF<sub>4</sub>
**SF<sub>6</sub>
|
*The different solvents available at Danchip, such as  
**Acetone
**Acetone
**1165 Remover
**1165 Remover
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*<nowiki>#</nowiki>1 150 mm wafer (only when system is set up for 150 mm wafers)  
*<nowiki>#</nowiki>1 150 mm wafer (only when system is set up for 150 mm wafers)  
|
|
*<nowiki>#</nowiki> small samples
*Several small samples
*<nowiki>#</nowiki>25 50 mm wafers
*<nowiki>#</nowiki>25 50 mm wafers
*<nowiki>#</nowiki>25 100 mm wafers
*<nowiki>#</nowiki>25 100 mm wafers
*<nowiki>#</nowiki>25 150 mm wafer
*<nowiki>#</nowiki>25 150 mm wafer
|
|
*<nowiki>#</nowiki> small samples
*Several small samples
*<nowiki>#</nowiki>25 50 mm wafers
*<nowiki>#</nowiki>25 50 mm wafers
*<nowiki>#</nowiki>25 100 mm wafers
*<nowiki>#</nowiki>25 100 mm wafers
*<nowiki>#</nowiki>25 150 mm wafers  
*<nowiki>#</nowiki>25 150 mm wafers  
|
*Samples smaller that can fit on a 100mm wafer.
*<nowiki>#</nowiki>1 50 mm wafer
*<nowiki>#</nowiki>1 100 mm wafer
*<nowiki>#</nowiki>1 150 mm wafer (only when the the system is set up for 150 mm wafers).
|
|
*Any sample # and size that can go into the beaker used.  
*Any sample # and size that can go into the beaker used.  
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*Aluminium
*Aluminium
*Polymers (list?)
*Polymers (list?)
Quartz/fused silica wafers
*Quartz/fused silica wafers
*Metals (no Pb and Te) max 5% wafer coverage


Polymer wafers?
Polymer wafers?
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*Resists, polymers
*Resists, polymers
|
|
Silicon wafers with layers of
*Any material that may go into the beaker used.
*Silicon oxide or silicon (oxy)nitride
*Photoresist/e-beam resist
*PolySilicon
*Metals (no Pb and Te) max 5% wafer coverage
*Polymers (list?)
Quartz/fused silica wafers
 
Polymer wafers (only with special permission)
|
*Any material the may go into the beaker used.
|-
|-
|}
|}


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Latest revision as of 16:48, 6 February 2023

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.

Feedback to this page: click here


Etching of Polymer

Stripping of polymer is often done by wet chemistry in a solvent that dissolves the given polymer. If wet chemistry cannot be used or a more controlled etch of the polymer is needed a plasma system is used instead. Plasma ashers are designed for removing polymers in primarily oxygen plasmas. It you need a more directional etch with a masking material RIE2 or ASE can be used.




Comparison of methods for polymer etching

ASE Plasma asher 1 Plasma asher 2 Wet Polymer stripping
General description The ASE was originally a dedicated deep Si etcher, but with the arrival of the Pegasus it has now been opened for polymer etching. The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers. The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers. This plasma asher is for Si wafers without metals. Wet polymer etching is used for stripping a resist/polymer when it is no longer needed. E.g. removing resist masks.
Etch direction

Process dependent:
Isotropic to anisotropic (vertical to sample surface)

Isotropic

Isotropic

Dissolves the polymer

Possible etch reactants
  • Oxygen plasma
  • Oxygen plasma mixed with
    • SF6
    • CF4
    • Ar
  • Oxygen plasma
  • Oxygen plasma mixed with
    • N2
    • CF4
  • Oxygen plasma
  • Oxygen plasma mixed with
    • N2
  • The different solvents available at Nanolab, such as
    • Acetone
    • 1165 Remover
Substrate size
  • Samples smaller than 100 mm wafers must be glued to a 100 mm wafer or placed in a reces on a 100 mm wafer.
  • #1 100 mm wafer
  • #1 150 mm wafer (only when system is set up for 150 mm wafers)
  • Several small samples
  • #25 50 mm wafers
  • #25 100 mm wafers
  • #25 150 mm wafer
  • Several small samples
  • #25 50 mm wafers
  • #25 100 mm wafers
  • #25 150 mm wafers
  • Any sample # and size that can go into the beaker used.
Allowed materials

Silicon wafers with layers of

  • Silicon oxide or silicon (oxy)nitride
  • Photoresist/e-beam resist
  • PolySilicon
  • Aluminium
  • Polymers (list?)
  • Quartz/fused silica wafers
  • Metals (no Pb and Te) max 5% wafer coverage

Polymer wafers?

  • Si, SiO2, Si3N4
  • Glass
  • Metals (no Pb or Te)
  • Resists, polymers
  • Si, SiO2, Si3N4
  • Glass
  • Resists, polymers
  • Any material that may go into the beaker used.