Specific Process Knowledge/Etch/Etching of Polymer: Difference between revisions

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== Etching of Polymer ==
== Etching of Polymer ==


Stripping of polymer is often done by wet chemistry in a solvent that dissolves the given polymer. If wet chemistry cannot be used or a more controled etch of the polymer is needed a plasma system is used instead. Plasma ashers are design for removing polymers in primarily oxygen plasmas. It you need a more directional etch with a masking material RIE2 or ASE can be used.
Stripping of polymer is often done by wet chemistry in a solvent that dissolves the given polymer. If wet chemistry cannot be used or a more controlled etch of the polymer is needed a plasma system is used instead. Plasma ashers are designed for removing polymers in primarily oxygen plasmas. It you need a more directional etch with a masking material RIE2 or ASE can be used.


*[[/Polymer Etch by ASE|Polymer Etch by ASE]]
*[[/Polymer Etch by ASE|Polymer Etch by ASE]]
<!-- Link to the process info page in LabAdviser -->
<!-- Link to the process info page in LabAdviser -->


*[[Specific Process Knowledge/Photolithography/Stripping equipment#Plasma_asher_1|Plasma asher 1]]
*[[Specific Process Knowledge/Lithography/Strip#Plasma_Asher_1|Plasma asher 1]]
<!-- Link to the process info page in LabAvdiser -->
<!-- Link to the process info page in LabAvdiser -->


*[[Specific Process Knowledge/Photolithography/Stripping equipment#Plasma_asher_2|Plasma asher 2]]
*[[Specific Process Knowledge/Lithography/Strip#Plasma_Asher_2|Plasma asher 2]]


*[[/Etch of Photo Resist using RIE|Etch of Photo Resist using RIE]]


*[[Specific Process Knowledge/Etch/Wet Polymer Etch|Wet Polymer Etch]]




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!
!
![[Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch)|ASE]]
![[Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch)|ASE]]
![[Specific Process Knowledge/Photolithography/Stripping equipment#Plasma_asher_1|Plasma asher 1]]
![[Specific Process Knowledge/Lithography/Strip#Plasma_Asher_1|Plasma asher 1]]
![[Specific Process Knowledge/Photolithography/Stripping equipment#Plasma_asher_2|Plasma asher 2]]
![[Specific Process Knowledge/Lithography/Strip#Plasma_Asher_2|Plasma asher 2]]
![[Specific Process Knowledge/Etch/RIE (Reactive Ion Etch)|RIE2]]
!Wet Polymer stripping
![[Specific Process Knowledge/Etch/Wet Polymer Etch|Wet Polymer Etch]]
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!General description
|The ASE was originally for deep Si etch but has now been turned into a polymer etcher. It should be used for pattering polymers
|The ASE was originally a dedicated deep Si etcher, but with the arrival of the Pegasus it has now been opened for polymer etching.  
|The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering af polymers.   
|The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers.   
|The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering af polymers. This plasma asher is for Si wafers without metals.
|The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers. This plasma asher is for Si wafers without metals.
|RIE2 can etch polymers in almost the same way as the ASE. We prefer the you use the ASE but there can be situations where the sample will not be allowed in the ASE (e.g. if there are metal on). If you think you need to use the RIE2 for polymer etching you need to get a special permission from the plasma group, see contact info on the RIE2 page in LabManager.
|Wet polymer etching is used for stripping a resist/polymer when it is no longer needed. E.g. removing resist masks.
|Wet polymer etch is used for stripping a resist/polymer when it is no longer needed. E.g. removing resist masks.
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Parameter 1
!Etch direction
|
|
*A
Process dependent: <br>
*B
Isotropic to anisotropic (vertical to sample surface)
|
|
*A
Isotropic
*B
|
|
*A
Isotropic
*B
|
|
*A
Dissolves the polymer
*B
|
*A
*B
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Parameter 2
!Possible etch reactants
|
|
*A
*Oxygen plasma
*B
*Oxygen plasma mixed with
*C
**SF<sub>6</sub>
**CF<sub>4</sub>
**Ar
|
|
*A
*Oxygen plasma
*Oxygen plasma mixed with
**N<sub>2</sub>
**CF<sub>4</sub>
|
|
*A
*Oxygen plasma
*Oxygen plasma mixed with
**N<sub>2</sub>
|
|
*A
*The different solvents available at Nanolab, such as
|
**Acetone
*A
**1165 Remover
 
|-
|-


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!Substrate size
!Substrate size
|
|
*<nowiki>#</nowiki> small samples
*Samples smaller than 100 mm wafers must be glued to a 100 mm wafer or placed in a reces on a 100 mm wafer.
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki>1 100 mm wafer
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki>1 150 mm wafer (only when system is set up for 150 mm wafers)
*<nowiki>#</nowiki> 150 mm wafers
|
*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers  
|
|
*<nowiki>#</nowiki> small samples
*Several small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki>25 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki>25 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
*<nowiki>#</nowiki>25 150 mm wafer
|
|
*<nowiki>#</nowiki> small samples
*Several small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki>25 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki>25 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers  
*<nowiki>#</nowiki>25 150 mm wafers  
|
|
*<nowiki>#</nowiki> small samples
*Any sample # and size that can go into the beaker used.
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|-
|-


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!'''Allowed materials'''
!'''Allowed materials'''
|
|
*Allowed material 1
Silicon wafers with layers of
*Allowed material 2
*Silicon oxide or silicon (oxy)nitride
|
*Photoresist/e-beam resist
*Allowed material 1
*PolySilicon
*Allowed material 2
*Aluminium
*Allowed material 3
*Polymers (list?)
*Quartz/fused silica wafers
*Metals (no Pb and Te) max 5% wafer coverage
 
Polymer wafers?
|
|
*Allowed material 1
*Si, SiO2, Si3N4
*Allowed material 2
*Glass
*Metals (no Pb or Te)
*Resists, polymers
|
|
*Allowed material 1
*Si, SiO2, Si3N4
*Allowed material 2
*Glass
*Resists, polymers
|
|
*Allowed material 1
*Any material that may go into the beaker used.
*Allowed material 2
|-
|-
|}
|}


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Latest revision as of 16:48, 6 February 2023

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.

Feedback to this page: click here


Etching of Polymer

Stripping of polymer is often done by wet chemistry in a solvent that dissolves the given polymer. If wet chemistry cannot be used or a more controlled etch of the polymer is needed a plasma system is used instead. Plasma ashers are designed for removing polymers in primarily oxygen plasmas. It you need a more directional etch with a masking material RIE2 or ASE can be used.




Comparison of methods for polymer etching

ASE Plasma asher 1 Plasma asher 2 Wet Polymer stripping
General description The ASE was originally a dedicated deep Si etcher, but with the arrival of the Pegasus it has now been opened for polymer etching. The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers. The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers. This plasma asher is for Si wafers without metals. Wet polymer etching is used for stripping a resist/polymer when it is no longer needed. E.g. removing resist masks.
Etch direction

Process dependent:
Isotropic to anisotropic (vertical to sample surface)

Isotropic

Isotropic

Dissolves the polymer

Possible etch reactants
  • Oxygen plasma
  • Oxygen plasma mixed with
    • SF6
    • CF4
    • Ar
  • Oxygen plasma
  • Oxygen plasma mixed with
    • N2
    • CF4
  • Oxygen plasma
  • Oxygen plasma mixed with
    • N2
  • The different solvents available at Nanolab, such as
    • Acetone
    • 1165 Remover
Substrate size
  • Samples smaller than 100 mm wafers must be glued to a 100 mm wafer or placed in a reces on a 100 mm wafer.
  • #1 100 mm wafer
  • #1 150 mm wafer (only when system is set up for 150 mm wafers)
  • Several small samples
  • #25 50 mm wafers
  • #25 100 mm wafers
  • #25 150 mm wafer
  • Several small samples
  • #25 50 mm wafers
  • #25 100 mm wafers
  • #25 150 mm wafers
  • Any sample # and size that can go into the beaker used.
Allowed materials

Silicon wafers with layers of

  • Silicon oxide or silicon (oxy)nitride
  • Photoresist/e-beam resist
  • PolySilicon
  • Aluminium
  • Polymers (list?)
  • Quartz/fused silica wafers
  • Metals (no Pb and Te) max 5% wafer coverage

Polymer wafers?

  • Si, SiO2, Si3N4
  • Glass
  • Metals (no Pb or Te)
  • Resists, polymers
  • Si, SiO2, Si3N4
  • Glass
  • Resists, polymers
  • Any material that may go into the beaker used.


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