Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions

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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
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==Etching of Chromium==
==Etching of Chromium==
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Etching of chromium can be done either by wet etch, dry etch or by sputtering with ions.
Etching of chromium can be done either by wet etch, dry etch or by sputtering with ions.
*[[Specific Process Knowledge/Etch/Wet Chromium Etch|Etching of Cr by wet etch]]
*[[Specific Process Knowledge/Etch/Wet Chromium Etch|Etching of Cr by wet etch]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium|Etching of Cr by dry etch]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium|Etching of Cr by ICP metal]]
*[[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|Sputtering of Cr]]
*[[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|Sputtering of Cr]]
<br clear="all" />
<br clear="all" />


==Comparison of Aluminium Etch Metodes==
==Comparison of Chromium Etch Methods==


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
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|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
!
![[Specific Process Knowledge/Etch/Wet Chromium Etch|Cr wet etch 1]]
![[Specific Process Knowledge/Etch/Wet Chromium Etch|Cr wet etch]]
![[Specific Process Knowledge/Etch/Wet Chromium Etch|Cr wet etch 2]]
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
|Wet etch of pure Al
|Wet etch of Cr premixed (Chrome etch 18)
|Wet etch of Al + 1.5% Si
|Dry plasma etch of Cr
|Dry plasma etch of Al
|Sputtering of Cr - pure physical etch
|Sputtering of Al - pure physical etch
|-
|-


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!Etch rate range
!Etch rate range
|
|
*~100nm/min (pure Al)
*~150nm/min at room temperature
|
|
*~60nm/min (Al+1.5% Si)
*~14 nm/min (depending on features size and etch load)  
|
*~350 nm/min (depending on features size and etch load)  
|  
|  
*~30nm/min (not tested yet)  
*~30nm/min (not tested yet)  
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Etch profile
!Etch profile
|
*Isotropic
|
|
*Isotropic
*Isotropic
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!Substrate size
!Substrate size
|
|
*<nowiki>#</nowiki>1-25 100 mm wafers
*Any size and number that can go inside the beaker in use
|
*<nowiki>#</nowiki>1-25 100 mm wafers
|
|
*smaller pieces on a carrier wafer
*smaller pieces on a carrier wafer
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|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
!Allowed materials
|
*Aluminium
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*E-beam resist
|
|
*Aluminium
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*E-beam resist
|
|
*Silicon
*Silicon
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Ething of Chromium can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done either with [[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP]] using Chlorine chemistry or with [[Specific Process Knowledge/Etch/IBE/IBSD Ionfab 300|IBE]] by sputtering with Ar ions.

Latest revision as of 15:47, 6 February 2023

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.

Feedback to this page: click here


Etching of Chromium

Etching of chromium can be done either by wet etch, dry etch or by sputtering with ions.


Comparison of Chromium Etch Methods

Cr wet etch ICP metal IBE (Ionfab300+)
Generel description Wet etch of Cr premixed (Chrome etch 18) Dry plasma etch of Cr Sputtering of Cr - pure physical etch
Etch rate range
  • ~150nm/min at room temperature
  • ~14 nm/min (depending on features size and etch load)
  • ~30nm/min (not tested yet)
Etch profile
  • Isotropic
  • Anisotropic (vertical sidewalls)
  • Anisotropic (angles sidewalls, typical around 70 dg)
Substrate size
  • Any size and number that can go inside the beaker in use
  • smaller pieces on a carrier wafer
  • #1 100mm wafers (when set up to 100mm wafers)
  • #1 150mm wafers (when set up to 150mm wafers)

Smaller pieces glued to carrier wafer

  • #1 50mm wafer
  • #1 100mm wafer
  • #1 150mm wafer
  • #1 200mm wafer
Allowed materials

No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals

  • Silicon
  • Quartz/fused silica
  • Photoresist/e-beam resist
  • PolySilicon,
  • Silicon oxide
  • Silicon (oxy)nitride
  • Aluminium
  • Titanium
  • Chromium
  • Silicon
  • Silicon oxides
  • Silicon nitrides
  • Metals from the +list
  • Metals from the -list
  • Alloys from the above list
  • Stainless steel
  • Glass
  • III-V materials
  • Resists
  • Polymers
  • Capton tape