Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions
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Etch | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_Chromium click here]''' | ||
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==Etching of Chromium== | |||
Etching of chromium can be done either by wet etch, dry etch or by sputtering with ions. | |||
*[[Specific Process Knowledge/Etch/Wet Chromium Etch|Etching of Cr by wet etch]] | |||
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium|Etching of Cr by ICP metal]] | |||
*[[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|Sputtering of Cr]] | |||
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== | ==Comparison of Chromium Etch Methods== | ||
{| border="1" cellspacing=" | |||
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" | |||
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| | ! | ||
| | ![[Specific Process Knowledge/Etch/Wet Chromium Etch|Cr wet etch]] | ||
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]] | |||
![[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE (Ionfab300+)]] | |||
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|-style="background:WhiteSmoke; color:black" | |||
!Generel description | |||
|Wet etch of Cr premixed (Chrome etch 18) | |||
|Dry plasma etch of Cr | |||
|Sputtering of Cr - pure physical etch | |||
|- | |||
|- | |- | ||
|-style="background:LightGrey; color:black" | |||
!Etch rate range | |||
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*~150nm/min at room temperature | |||
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*~14 nm/min (depending on features size and etch load) | |||
| | |||
*~30nm/min (not tested yet) | |||
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| | |-style="background:WhiteSmoke; color:black" | ||
!Etch profile | |||
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*Isotropic | |||
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*Anisotropic (vertical sidewalls) | |||
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*Anisotropic (angles sidewalls, typical around 70 dg) | |||
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| | |-style="background:LightGrey; color:black" | ||
!Substrate size | |||
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*Any size and number that can go inside the beaker in use | |||
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*smaller pieces on a carrier wafer | |||
*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers) | |||
*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers) | |||
| | |||
Smaller pieces glued to carrier wafer | |||
*<nowiki>#</nowiki>1 50mm wafer | |||
*<nowiki>#</nowiki>1 100mm wafer | |||
*<nowiki>#</nowiki>1 150mm wafer | |||
*<nowiki>#</nowiki>1 200mm wafer | |||
|- | |- | ||
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|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!Allowed materials | |||
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No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals | |||
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*Silicon | |||
*Quartz/fused silica | |||
*Photoresist/e-beam resist | |||
*PolySilicon, | |||
*Silicon oxide | |||
*Silicon (oxy)nitride | |||
*Aluminium | |||
*Titanium | |||
*Chromium | |||
| | | | ||
*Silicon | |||
*Silicon oxides | |||
*Silicon nitrides | |||
*Metals from the +list | |||
*Metals from the -list | |||
*Alloys from the above list | |||
*Stainless steel | |||
*Glass | |||
*III-V materials | |||
*Resists | |||
*Polymers | |||
*Capton tape | |||
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Latest revision as of 15:47, 6 February 2023
Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.
All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.
Feedback to this page: click here
Etching of Chromium
Etching of chromium can be done either by wet etch, dry etch or by sputtering with ions.
Comparison of Chromium Etch Methods
Cr wet etch | ICP metal | IBE (Ionfab300+) | |
---|---|---|---|
Generel description | Wet etch of Cr premixed (Chrome etch 18) | Dry plasma etch of Cr | Sputtering of Cr - pure physical etch |
Etch rate range |
|
|
|
Etch profile |
|
|
|
Substrate size |
|
|
Smaller pieces glued to carrier wafer
|
Allowed materials |
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals |
|
|