Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Ti etch: Difference between revisions

Latest revision as of 15:45, 6 February 2023

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This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated

Results from the acceptance test in February 2011

Acceptance test for Ti etch :

.	Acceptance Criteria	Acceptance Results
Substrate information	50 mm SSP Si wafer 525 µm thick Supplied by Nanolab	.
Material to be etched	E-beam deposited Ti	.
Mask information	E-beam resist mask: 400nm of spin coated ZEP520A e-beam resist Patterned by E-beam lithography	.
Features to be etched	300 nm - 3µm dots and lines + a square of 200µmx200µm	.
Etch depth	300nm	~270 nm
Etch rate	>80 nm/min	22 nm/min +- 0.3nm/min (one standard deviation)
Etch rate uniformity	<+-2%	+-(0.2% +-0.2%)
Reproducibility	<+-2%	+-(0.8% +-0.5%)
Selectivity (Ti etch rate/ZEP etch rate)	At least 1:1	0.7:1
Etch profile	70-90dg.	~65dg @270nm ~77dg @123nm

Process parameters for the acceptance test

Parameter	Ti etch acceptance
Neutralizer current [mA]	550
RF Power [W]	1200
Beam current [mA]	500
Beam voltage [V]	600
Beam accelerator voltage	400
Ar flow to neutralizer [sccm]	6.0
Ar flow to beam [sccm]	6.0
Rotation speed [rpm]	20
Stage angle [degrees]	20

Some SEM profile images of the etched Ti

Ti s10-4: 270nm deep - 500nm line. all zep has gone. Profile: ~65 dg.	Ti s10-5: 270nm deep - 300nm line. All zep has gone. Profile: ~65 dg.	Ti S7 5: 123nm deep - 300nm line. Still zep left. Profile: ~77 dg

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+'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_Ti_etch click here]'''
+<br> {{CC-bghe1}}
 ==Results from the acceptance test in February 2011==
-'''Acceptance test for Ti etch:'''
+'''Acceptance test for Ti etch :'''
 {| border="2" cellspacing="0" cellpadding="2"
 |-
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 *50 mm SSP Si wafer
 *525 µm thick
-*Supplied by Danchip
+*Supplied by Nanolab
 |.
 |-
@@ Line 29: / Line 32: @@
 !style="background:silver; color:black" align="left" valign="top"|Features to be etched
 |style="background:WhiteSmoke; color:black"|
-*300nm - 3µm dots and lines + a square of 200µmx200µm
+*300 nm - 3µm dots and lines + a square of 200µmx200µm
 |.
 |-
@@ Line 40: / Line 43: @@
 !style="background:silver; color:black" align="left" valign="top"|Etch rate
 |style="background:WhiteSmoke; color:black"|
-*>80nm/min
+*>80 nm/min
 |
-*22nm/min +- 0.3nm/min (one standard deviation)
+*22 nm/min +- 0.3nm/min (one standard deviation)
 |-
 !style="background:silver; color:black" align="left" valign="top"|Etch rate uniformity
@@ Line 56: / Line 59: @@
 *+-(0.8% +-0.5%)
 |-
-!style="background:silver; color:black" align="left" valign="top"|Selectivity (Au etch rate/ZEP etch rate)
+!style="background:silver; color:black" align="left" valign="top"|Selectivity (Ti etch rate/ZEP etch rate)
 |style="background:WhiteSmoke; color:black"|
 *At least 1:1
@@ Line 73: / Line 76: @@
 {| border="2" cellspacing="2" cellpadding="3"
 !Parameter
-!Au etch acceptance
+!Ti etch acceptance
 |-
-|Neutalizer current [mA]
+|Neutralizer current [mA]
 |550
 |-
 |RF Power [W]
-|1300
+|1200
 |-
 |Beam current [mA]
@@ Line 91: / Line 94: @@
 |-
 |Ar flow to neutralizer [sccm]
-|5.0
+|6.0
 |-
 |Ar flow to beam [sccm]
-|10.0
+|6.0
 |-
 |Rotation speed [rpm]
@@ Line 100: / Line 103: @@
 |-
 |Stage angle [degrees]
-|30
+|20
 |-
 |}
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-===Some SEM profile images of the etched Au===
+===Some SEM profile images of the etched Ti===
 {| border="1" cellspacing="1" cellpadding="2"
 !