Specific Process Knowledge/Lithography/DUVStepperLithography/Process Instructions: Difference between revisions
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== Process Instructions == | == Process Instructions == | ||
The SÜSS Spinner-Stepper is dedicated for spinning DUV resists. Please note that a Bottom Anti-Reflective Coating (BARC) is necessary to guarantee high quality of both the resist film and the exposure. Please find the specification of the SÜSS Spinner-Stepper in [[Specific_Process_Knowledge/Lithography/DUVStepperLithography# | The SÜSS Spinner-Stepper is dedicated for spinning DUV resists. Please note that a Bottom Anti-Reflective Coating (BARC) is necessary to guarantee high quality of both the resist film and the exposure. Please find the specification of the SÜSS Spinner-Stepper in [[Specific_Process_Knowledge/Lithography/DUVStepperLithography#DUV_Stepper|LabAdviser]]. | ||
Usually, in order to guarantee the highest fidelity of the produced pattern on the wafer the best suitable exposure dose has to be evaluated for each individual pattern, resist type and resist thickness. Thus, when a new reticle is used, it is recommended to perform an exposure dose test and - for resist thicknesses larger than 500 nm - additionally a focus offset test. After evaluation by SEM the identified dose and focus - that leads to the most accurate pattern - can be applied in the DUV process for the required wafers. | Usually, in order to guarantee the highest fidelity of the produced pattern on the wafer the best suitable exposure dose has to be evaluated for each individual pattern, resist type and resist thickness. Thus, when a new reticle is used, it is recommended to perform an exposure dose test and - for resist thicknesses larger than 500 nm - additionally a focus offset test. After evaluation by SEM the identified dose and focus - that leads to the most accurate pattern - can be applied in the DUV process for the required wafers. | ||