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| <!--Checked for updates on 30/7-2018 - ok/jmli -->
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| '''Feedback to this page:
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| [mailto:plasma@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/FAQ/Masks click here]'''
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| ; Question 1
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| : I remember you said that you don't like Al as masking material because it will get sputtered off (am I right?) - but what about ALD deposited aluminium oxide - it is, as far as I know, much harder and resistant than Al..?
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| ;Answer 1
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| : We don't have experience with ALD deposited aluminium oxide as a mask, however for some ESC configurations we have seen evidence of sputtering of the alumina uniformity shield surrounding the wafer; this would lead me to believe that the ALD aluminium oxide could still sputter and cause contamination issues.
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| Source: Kerry Roberts, SPTS
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