Specific Process Knowledge/Lithography/ARN8200

AR-N 8200

AR-N 8200 is a negative E-beam resist from Allresist, it is also known as "Medusa 82". A product presentation from Allresist is available here AR-N8200 presentation.

Allresist also provides these processing guidelines.

Contrast curve @ 100 kV (JEOL 9500)

Exposure dose for AR-N 8200 is very dependent on Post Exposure Bake (PEB) temperature. A contrast curve for four different PEB processes were obtained with the following process parameters.

AR-N 8200 Contrast Curve, Processed by THOPE, FEB 2022
Resist	Spin Coat	E-beam exposure	PEB	Development
AR-N8200.06	LabSpin 2, 4000 rpm for 60s, softbake 10 min @ 150 degC, thickness is 110 nm	JBX9500, 60 nA, doses 100-1600 µC/cm2, 150 µm x 300 µm rectangles	Labspin 2 hotplate, 130, 150, 160 or 170 degC for 10 min	EBL development fumehood, 60 sec development in AR300-47:DIW (1:1), 30 sec rinse in DIW, nitrogen gun dry

Hotplate temperatures are assumed surface temperatures based on the 0.90 correction factor in use on the hotplate.

The resulting resist structure height is mapped with Dektak XTa and plotted as a contrast curve below. It is apparent that the dose and contrast is very dependent on the PEB parameters.

Results at 30 kV (Raith eLINE)

A dose test is carried out with the following parameters

AR-N 8200 30 kV dose test, Processed by THOPE, AUG 2022
Resist	Spin Coat	E-beam exposure	PEB	Development
AR-N8200.06	LabSpin 2, 4000 rpm for 60s, softbake 10 min @ 150 degC, thickness is 120 nm	Raith eLINE Plus, 30 kV, 60 µm aperture, 168 pA	Labspin 2 hotplate 170 degC for 10 min	EBL development fumehood, 60 sec development in AR300-47:DIW (1:1), 30 sec rinse in DIW, nitrogen gun dry

Area/curved element dose: Fully insoluble dose is around 150-180 µC/cm2.

Line dose: Fully insoluble dose is around 1700 pC/cm.

Dot dose: Fully insoluble dose is around 0.1 pC, this gives a circular diameter of 60 nm. Diameter can be varied by increasing dose, at 0.4 pC diameter is about 100 nm and at 1.2 pC it is about 170 nm.