Specific Process Knowledge/Lithography/ARN8200: Difference between revisions
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Allresist also provides these [https://www.allresist.com/wp-content/uploads/sites/2/2020/03/SXAR-N8200-1_english_Allresist_product_information.pdf processing guidelines.] | Allresist also provides these [https://www.allresist.com/wp-content/uploads/sites/2/2020/03/SXAR-N8200-1_english_Allresist_product_information.pdf processing guidelines.] | ||
== Contrast curve == | == Contrast curve @ 100 kV (JEOL 9500) == | ||
Exposure dose for AR-N 8200 is very dependent on Post Exposure Bake (PEB) temperature. A contrast curve for four different PEB processes were obtained with the following process parameters. | Exposure dose for AR-N 8200 is very dependent on Post Exposure Bake (PEB) temperature. A contrast curve for four different PEB processes were obtained with the following process parameters. | ||
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[[file:ARN8200DoseCurve.png]] | [[file:ARN8200DoseCurve.png]] | ||
== Results at 30 kV (Raith eLINE) == | |||
A dose test is carried out with the following parameters | |||
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!colspan="5"|AR-N 8200 30 kV dose test, Processed by THOPE, AUG 2022 | |||
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!Resist | |||
!Spin Coat | |||
!E-beam exposure | |||
!PEB | |||
!Development | |||
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|AR-N8200.06 | |||
|LabSpin 2, 4000 rpm for 60s, softbake 10 min @ 150 degC, thickness is 120 nm | |||
|Raith eLINE Plus, 30 kV, 60 µm aperture, 168 pA | |||
|Labspin 2 hotplate 170 degC for 10 min | |||
|EBL development fumehood, 60 sec development in AR300-47:DIW (1:1), 30 sec rinse in DIW, nitrogen gun dry | |||
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Area/curved element dose: Fully insoluble dose is around 150-180 µC/cm2. | |||
Line dose: Fully insoluble dose is around 1700 pC/cm. | |||
Dot dose: Fully insoluble dose is around 0.1 pC, this gives a circular diameter of 60 nm. Diameter can be varied by increasing dose, at 0.4 pC diameter is about 100 nm and at 1.2 pC it is about 170 nm. | |||