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| {|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="90%"
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| |'''Resist'''
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| |'''Polarity'''
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| |'''Manufacturer'''
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| |'''Comments'''
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| |'''Technical reports'''
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| |'''Developer'''
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| |'''Rinse'''
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| |'''Remover'''
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| |'''Process flows (in docx-format)'''
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| |-style="background:WhiteSmoke; color:black"
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| |'''[[Specific_Process_Knowledge/Lithography/mrEBL6000|mr EBL 6000.1]]'''
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| |Positive
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| |[http://http://www.microresist.de/home_en.htm MicroResist]
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| |Standard negative resist
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| |[[media:mrEBL6000 Processing Guidelines.pdf|mrEBL6000 processing Guidelines.pdf]]
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| |mr DEV
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| |IPA
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| |mr REM
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| |[[media:Process_Flow_mrEBL6000.docx|Process_Flow_mrEBL6000.docx]]
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| |}
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| == Process Flow ==
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| Test of mr EBL 6000.1; a negative e-beam resist from MicroResist.
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| !Equipment
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| !Process Parameters
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| !Comments
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| !colspan="4"|Pretreatment
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| |4" Si wafers
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| |1 min @ 110 degC, hotplate
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| !colspan="4"|Spin Coat
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| |Spin Coater Manual, LabSpin, A-5
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| |mr EBL 6000.1 E-beam resist
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| 60 sec at various spin speed.
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| Acceleration 2000 s-2,
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| softbake 3 min at 110 deg Celcius
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| |Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice.
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| !colspan="4"|Characterization
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| |Ellipsometer VASE B-1
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| |9 points measured on 100 mm wafer
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| |ZEP program used; measured at 70 deg only
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| !colspan="4"|E-beam Exposure
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| | mrEBL6000 works as a negative e-beam resist but is also UV sensitive, why resist and coated wafers should be kept in yellow rooms only. When carrying the wafers to the e-beam writer, use a black or blue box for protection. While mounting the wafers in the e-beam cassettes, you can turn off the white light in the e-beam room and turn on the yellow light which is located above the pre-aligner setup. Please mount as close to exposure as possible and turn of the with light outside the room and place a note on the door not to turn on light while the cassette is in the stocker. |
| |-style="background:LightGrey; color:black"
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| |JEOL 9500 E-beam writer, E-1
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| |Dosepattern 15nm - 100nm,
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| dose 120-280 muC/cm2
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| |Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array
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| | mrEBL6000 is a chemically amplified resist, i.e. immediately after e-beam exposure, the wafers require a post-exposure bake. If no post-exposure bake is performed, the resist is not crosslinked and will most likely dissolve during development. |
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| !colspan="4"|Development
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| | This resist can be used as standard negative resist at Nanolab, but due to limited use, we often need to buy a new bottle, hence please ask long time (up to 3 months) in advance for this chemical. or by it yourself! |
| |-style="background:LightGrey; color:black"
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| |Fumehood, D-3
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| |60 sec in
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| 60 sec rinse in IPA,
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| N2 Blow dry
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| |Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun.
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| !colspan="4"|Characterization
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| | == 3 week project on mrEBL6000 by William Tiddi == |
| |-style="background:LightGrey; color:black"
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| |Zeiss SEM Supra 60VP, D-3
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| |2-3 kV, shortest working distance possible, chip mounted with Al tape
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| |The wafers are diced into smaller pieces and sputter coated with Pt at DTU CEN before SEM inspection; please contact [mailto:ramona.mateiu@cen.dtu.dk Ramona Valentina Mateiu] for further information.
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| |} | | mrEBL6000 was studied April 2015 by William Tiddi; the report can be found [[media:Report (2).pdf|here]]. |
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| == Spin Curve == | | == Spin Curve == |
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| | ==Contrast Curve== |
| | The contrast curve is measured on lines 100 nm in width, exposed with doses in the range of 6-63 µC/cm2. After exposure, the sample has been post-exposure baked 5 min @ 110 degree C. Development is performed with mr-DEV 600 in 40s followed by an IPA rinse 60s. |
| | These measurements are performed by WILTID April 2015. |
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| | [[File:mrEBL_contrast.png|right|500px]] |
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| |} | | <br> |
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| | [[File:mrEBL_doses6_33.png|left|600px]] |
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