Specific Process Knowledge/Lithography/ARP617: Difference between revisions

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Test of copolymer AR-P 617.05; a positive e-beam resist from AllResist. This copolymer is meant to be used as a sacrificial layer in a bi- or tri-layer e-beam resist stack (i.e. bottom layer). The copolymer adheres well on many substrates and can be dry-etched isotropically (to create under-cut) and anisotropically by reactive ion etch. Furthermore, it is softbaked at temperatures above 200 degrees and thus themally stable to many post-processing steps.
Test of copolymer AR-P 617.05; a positive e-beam resist from AllResist. This copolymer is meant to be used as a sacrificial layer in a bi- or tri-layer e-beam resist stack (i.e. bottom layer). The copolymer adheres well on many substrates and can be dry-etched isotropically (to create under-cut) and anisotropically by reactive ion etch. Furthermore, it is softbaked at temperatures above 200 degrees and thus themally stable to many post-processing steps.


This is not a standard resist at Nanolab.


== Spin Curve ==
== Spin Curve ==
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[[File:SpinCurveARP617.jpg|right|500px]]
[[File:SpinCurveARP617.jpg|right|500px]]
Please remember that a spin curve is only valid for that tool otherwise it acts as a guide for future tests.


The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only.  
The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only.  

Latest revision as of 11:16, 20 August 2021

Test of copolymer AR-P 617.05; a positive e-beam resist from AllResist. This copolymer is meant to be used as a sacrificial layer in a bi- or tri-layer e-beam resist stack (i.e. bottom layer). The copolymer adheres well on many substrates and can be dry-etched isotropically (to create under-cut) and anisotropically by reactive ion etch. Furthermore, it is softbaked at temperatures above 200 degrees and thus themally stable to many post-processing steps.

This is not a standard resist at Nanolab.

Spin Curve

Please remember that a spin curve is only valid for that tool otherwise it acts as a guide for future tests.

The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only.

9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.

AllResist AR-P 617.05 spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 13-06-2014
Spin Speed [rpm] Acceleration [1/s2] Thickness [nm] St Dev
2000 2000 256.70 0.96
3000 2000 208.33 1.24
4000 2000 185.41 0.50
5000 2000 168.34 0.88
6000 2000 161.90 1.99