Specific Process Knowledge/Lithography/ARP617: Difference between revisions

Latest revision as of 11:16, 20 August 2021

Test of copolymer AR-P 617.05; a positive e-beam resist from AllResist. This copolymer is meant to be used as a sacrificial layer in a bi- or tri-layer e-beam resist stack (i.e. bottom layer). The copolymer adheres well on many substrates and can be dry-etched isotropically (to create under-cut) and anisotropically by reactive ion etch. Furthermore, it is softbaked at temperatures above 200 degrees and thus themally stable to many post-processing steps.

This is not a standard resist at Nanolab.

Spin Curve

Please remember that a spin curve is only valid for that tool otherwise it acts as a guide for future tests.

The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only.

9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.

AllResist AR-P 617.05 spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 13-06-2014
Spin Speed [rpm]	Acceleration [1/s2]	Thickness [nm]	St Dev
2000	2000	256.70	0.96
3000	2000	208.33	1.24
4000	2000	185.41	0.50
5000	2000	168.34	0.88
6000	2000	161.90	1.99

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-These tests are currently in progress and this page thus under construction. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.
+Test of copolymer AR-P 617.05; a positive e-beam resist from AllResist. This copolymer is meant to be used as a sacrificial layer in a bi- or tri-layer e-beam resist stack (i.e. bottom layer). The copolymer adheres well on many substrates and can be dry-etched isotropically (to create under-cut) and anisotropically by reactive ion etch. Furthermore, it is softbaked at temperatures above 200 degrees and thus themally stable to many post-processing steps.
+This is not a standard resist at Nanolab.
-== Process Flow ==
+== Spin Curve ==
-Test of copolymer AR-P 617.05; a positive e-beam resist from AllResist. This copolymer is meant to be used as a sacrificial layer in a bi- or tri-layer e-beam resist stack (i.e. bottom layer). The copolymer adheres well on many substrates and can be dry-etched isotropically (to create under-cut) and anisotropically by reactive ion etch.
-{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;"
-|-
-|-
+[[File:SpinCurveARP617.jpg|right|500px]]
-|-style="background:Black; color:White"
-!Equipment
-!Process Parameters
-!Comments
-!Initials and date
-|-
-|-
-|-style="background:WhiteSmoke; color:black; text-align:center"
-!colspan="4"|Pretreatment
-|-
-|-
-|-style="background:LightGrey; color:black"
-|4" Si wafers
-|No Pretreatment
-|
-|TIGRE, 13-06-2014
-|-
-|-
-|-style="background:WhiteSmoke; color:black; text-align:center"
-!colspan="4"|Spin Coat
-|-
-|-
-|-style="background:LightGrey; color:black"
-|Spin Coater Manual, LabSpin, A-5
-|AR-P 617.05 AllResist E-beam resist
-sec at various spin speed.
-Acceleration 2000 s-2,
-softbake 10 min at 200 deg Celcius
-|Resist poured by use of disposable pipette
-|TIGRE, 13-06-2014
-|-
-|-
-|-style="background:WhiteSmoke; color:black; text-align:center"
-!colspan="4"|Characterization
-|-
-|-
-|-style="background:LightGrey; color:black"
-|Ellipsometer VASE B-1
-|9 points measured on 100 mm wafer
-|ZEP program used; measured at 70 deg only
-|TIGRE, 13-06-2014
-|-
-|}
+Please remember that a spin curve is only valid for that tool otherwise it acts as a guide for future tests.
-== Spin Curve ==
+The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only.
-[[File:SpinCurveARP617.jpg|right|500px]]
-The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.
+points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.
 {|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"