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Specific Process Knowledge/Lithography/EBeamLithography/High resolution patterning with HSQ: Difference between revisions

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Created page with "* ''This work was done by Bingdong Chang and Xiaoli Zhu in 2016;'' * ''This page was edited by Bingdong Chang 23 October 2017.'' High resolution patterns (sub-10nm dots with..."
 
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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography/High_resolution_patterning_with_HSQ click here]'''
* ''This work was done by Bingdong Chang and Xiaoli Zhu in 2016;''
* ''This work was done by Bingdong Chang and Xiaoli Zhu in 2016;''


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image: HSQ3.png|Lines with sub-10nm linewidths
image: HSQ3.png|Lines with sub-10nm linewidths
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In most cases the time from taking HSQ out of the fridge to spin coat, and between spin coat and exposure as well as the time between exposure and development impacts on the resolution achieved.
It is therefore not recommended to use HSQ as a trainings resist.


The details of the process is shown below in the table:
The details of the process is shown below in the table:
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</gallery>
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It should be noticed that to reduce the broadening of patterns caused by forward and backward scattered electrons, the HSQ resist was first thinned down to below 50nm using BHF before exposure. The etch rate of HSQ with different concentration of BHF is shown as below.
It should be noticed that to reduce the broadening of patterns caused by forward and backward scattered electrons, the HSQ resist was first thinned down to below 50nm using BHF before exposure. PEC could also improve the resolution.
The etch rate of HSQ with different concentration of BHF is shown as below.


The details of the process is shown below in the table:
The details of the process is shown below in the table:
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