Jump to content

Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch: Revision history

View logs for this page

Diff selection: Mark the radio buttons of the revisions to compare and hit enter or the button at the bottom.
Legend: (cur) = difference with latest revision, (prev) = difference with preceding revision, m = minor edit.

curprev 13:2313:23, 20 September 2023‎ Bghe talk contribs‎ 6,152 bytes +39‎ →‎Testing with electromagnetic coils /Cr mask
curprev 13:0213:02, 20 September 2023‎ Bghe talk contribs‎ 6,113 bytes +9‎ →‎Testing with electromagnetic coils

curprev 09:4909:49, 4 September 2023‎ Bghe talk contribs‎ 5,132 bytes +1‎ →‎Uniformity results with SiO2_res_10
curprev 09:4709:47, 4 September 2023‎ Bghe talk contribs‎ 5,131 bytes +5‎ →‎Uniformity results with SiO2_res_10 Tag: Manual revert
curprev 09:4609:46, 4 September 2023‎ Bghe talk contribs‎ 5,126 bytes −5‎ →‎Uniformity results with SiO2_res_10 Tag: Reverted
curprev 09:4609:46, 4 September 2023‎ Bghe talk contribs‎ 5,131 bytes +215‎ No edit summary

curprev 14:2114:21, 23 August 2023‎ Bghe talk contribs‎ 4,916 bytes +1‎ →‎Testing with electromagnetic coils
curprev 14:2014:20, 23 August 2023‎ Bghe talk contribs‎ 4,915 bytes +4‎ →‎Testing with electromagnetic coils
curprev 13:4013:40, 23 August 2023‎ Bghe talk contribs‎ 4,911 bytes +9‎ →‎Testing with electromagnetic coils

curprev 10:1110:11, 22 August 2023‎ Bghe talk contribs‎ 4,902 bytes +19‎ →‎Uniformity results with SiO2_res_10
curprev 10:1010:10, 22 August 2023‎ Bghe talk contribs‎ 4,883 bytes +118‎ →‎Uniformity results with SiO2_res_10
curprev 09:5809:58, 22 August 2023‎ Bghe talk contribs‎ 4,765 bytes +43‎ →‎SiO2 Etch using resist as masking material

curprev 11:2811:28, 3 February 2023‎ Bghe talk contribs‎ 2,992 bytes +19‎ →‎SiO2 Etch using aSi as masking material
curprev 11:2711:27, 3 February 2023‎ Bghe talk contribs‎ 2,973 bytes −65‎ →‎SiO2 Etch using resist as masking material

curprev 11:4411:44, 27 January 2023‎ Bghe talk contribs‎ 3,038 bytes +162‎ →‎SiO2 Etch using resist as masking material

curprev 15:1815:18, 1 December 2022‎ Bghe talk contribs‎ 2,876 bytes +2‎ →‎DUV optimization

curprev 14:3914:39, 27 April 2021‎ Bghe talk contribs‎ 2,874 bytes +33‎ →‎SiO2 Etch using resist as masking material
curprev 14:3814:38, 27 April 2021‎ Bghe talk contribs‎ 2,841 bytes +90‎ →‎SiO2 Etch using resist as masking material

curprev 19:5819:58, 23 April 2021‎ Bghe talk contribs‎ 2,751 bytes 0‎ →‎DUV optimisation

Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2_Etch"