View source for Specific Process Knowledge/Thin film deposition/TiO2 deposition in Sputter System (Lesker)

<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>

=TiO<sub>2</sub> Sputtering=

This page presents the results of TiO<sub>2</sub> deposition using <b>DC reactive sputtering</b> in Sputter-System Lesker, now commonly known as "Old Lesker". The deposition target is <b>Ti</b>, and O<sub>2</sub> gas is added as reactive gas. Source #3 (DC) was used.

The fabrication and characterization described below were conducted in <b>2021 by Evgeniy Shkondin, DTU Nanolab</b>. The prepared samples were investigated by the X-ray Reflectivity method. The focus of the study was the deposition conditions. 


The process recipe in a Sputter-System (Lesker) is following:


* Deposition type: <b>DC-R</b>
* Power: <b>20 W</b>. Such a low power can be used for doping purposes during transparent conducting oxide thin film production (such as doped ZnO or similar). For other applications higher powers are preferable.
* Pressure: <b>3 mTorr</b>
* Gas: <b>10% of O<sub>2</sub> in Ar</b>
* Deposition time: <b>28800s</b> which corresponds to <b>8 hours</b>.
* Temperature: 20&deg;C (no heating)
* Measured DC bias: 322V

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* Deposition Rate: <b><span style="color: red">0.00024 nm/s</span></b>
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===XRR-measurement===

{| border="2" cellspacing="2" cellpadding="5"  align="center"

|- 
!colspan="6" border="none" style="background:silver; color:black;" align="center"| Layer parameter list
|-
|style="background:WhiteSmoke; color:black"|<b>Layer name</b>
|style="background:WhiteSmoke; color:black"|<b>Thickness (nm)</b>
|style="background:WhiteSmoke; color:black"|<b>Density (g/cm<sup>3</sup>)</b>
|style="background:WhiteSmoke; color:black"|<b>Rougness (nm)</b>
|style="background:WhiteSmoke; color:black"|<b>Delta</b>
|style="background:WhiteSmoke; color:black"|<b>Beta</b>

|-
|<b>Moisture</b>
|0.33
|2.33
|1.05
|style="background:WhiteSmoke; color:black"|7.5913e-6
|style="background:WhiteSmoke; color:black"|1.7628e-7

|-
|<b>TiO<sub>2</sub> (sputtered)</b>
|<p style="color:red;"><b>6.99</b></p>
|3.62
|0.31
|style="background:WhiteSmoke; color:black"|1.1147e-5
|style="background:WhiteSmoke; color:black"|5.4574e-7

|-
|<b>SiO<sub>2</sub> (native oxide)</b>
|1.32
|2.10
|0.57
|style="background:WhiteSmoke; color:black"|6.8506e-6
|style="background:WhiteSmoke; color:black"|1.5908e-7

|-
|<b>Si (wafer)</b>
|<math>\infty</math>
|2.328
|0.41
|style="background:WhiteSmoke; color:black"|7.5796e-6
|style="background:WhiteSmoke; color:black"|1.7601e-7

|}

<gallery caption="XRR analysis of TiO2 thin film." widths="1500px" heights="500px" perrow="1">
image:eves_TiO2_old_lesker_20W_2021.png| X-ray reflectivity. Measurement and Fit.
</gallery>