View source for Specific Process Knowledge/Thin film deposition/Gadolinium Cerium Oxide

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== Deposition of Gadolinium Cerium Oxide ==

Thin films of Gadolinium Cerium Oxide (Gd<sub>0.2</sub>Ce<sub>0.8</sub>O<sub>2</sub>) can be deposited using RF sputtering. In this process, the main parameters are temperature and additional oxygen, which can be adjusted to tailor the properties of the deposited films. The target is a solid ceramic 75 mm (0.125" thickness) GCO target bonded to a Cu plate.

*[[Specific Process Knowledge/Thin film deposition/Gadolinium Cerium Oxide/Gadolinium Cerium Oxide in Cluster Lesker PC1|Gd<sub>0.2</sub>Ce<sub>0.8</sub>O<sub>2</sub> sputtering in Sputter-System Metal-Oxide (PC1)]].



==GCO sputtering in Sputter-System Metal-Oxide (PC1)==

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![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-System Metal-Oxide (PC1)/Sputter-System Metal-Nitride (PC3)]]
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!Generel description
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*RF sputtering
*R-RF sputtering
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!Stoichiometry
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*Gd<sub>0.2</sub>Ce<sub>0.8</sub>O<sub>2</sub> (can be tuned)

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!Film Thickness
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* few nm - ? (hundreds of nm)
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!Deposition rate
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* 0.015-0.025 nm/s 
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!Step coverage
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*Not investigated
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!Process Temperature
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* Up to 600 °C (most likely in the range of 200°C)
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!Substrate size
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*Several small samples
*100 mm wafer
*150 mm wafer
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!Allowed materials
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*Silicon 
*Silicon oxide, silicon nitride
*Quartz/fused silica 
*Metals 
*III-V materials (use dedicated carrier wafer)
*Almost anything that is not toxic
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