View source for Specific Process Knowledge/Thin film deposition/Deposition of Tantalum/Sputtering of Ta

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=Sputtering of Tantalum=

Ta can be DC sputtered in the [[Specific_Process_Knowledge/Thin_film_deposition/Lesker|Sputter-System (Lesker)]] 
as well as in the [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|cluster sputter system]]. 
You will find information on the pressure, max power and expected deposition rate for the Sputter-System Lesker (commonly called the "old" Lesker)[http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Lesker#List_of_available_targets_for_the_Sputter-System.28Lesker.29_.2803_June_2013.29 here] in LabAdviser. To see all the deposition parameters used in that machine by others, search the [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&machid=244 Sputter-System Lesker Process Log] in LabManager. Ta has also been deposited in the newer cluster sputter system in the chamber called PC 3 from room temperature to 500 °C. You can search the [https://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&machid=442 PC 3 Process Log] for further information on deposition parameters. 

Below you will find information on the surface roughness of sputtered Ta films from the old Sputter-System (Lesker).

==Surface roughness optimization==
''By Bjarke Thomas Dalslet @Nanotech.dtu.dk''

The Lesker CMS 18 sputter system provides thin films of varying surface roughness. This roughness was verified to be dependent on the sputtered material, sputter mode (DC or RF) and the substrate bias strength. Other probable factors include sputter power and pressure. Here you find the results for Ta. Similar studies were carried out for [[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_Silicon_Oxide_using_Lesker_sputter_tool|SiO<sub>2</sub>]] and
[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon/Si_sputter_in_Sputter-System_Lesker|Si]].

The "Ta" study was done on clean Si substrates. The sputter pressure was 3 mTorr using DC sputtering of a Ta target. Some O<sub>2</sub> was added to wafer 25 and 26 to make Ta<math>_2</math>O<math>_5</math>. In order to get fully oxidized films, up to 30-45% O<sub>2</sub> should be added. Consult the thesis of Carsten Christensen for details on Ta<math>_2</math>O<math>_5</math>.

===Ta===
{| {{table}} border="1" cellspacing="0" cellpadding="8"
| align="center" style="background:#f0f0f0;"|'''Wafer nr'''
| align="center" style="background:#f0f0f0;"|'''RF bias (W)'''
| align="center" style="background:#f0f0f0;"|'''Reactive O<sub>2</sub> (%)'''
| align="center" style="background:#f0f0f0;"|'''Power(W)'''
| align="center" style="background:#f0f0f0;"|'''Rq (RMS) (nm)'''
| align="center" style="background:#f0f0f0;"|'''Thickness (nm)'''
|-
| blank1||0||0||180||0.209||
|-
| 16||10||0||180||0.36||56
|-
| 24||20||0||180||0.357||
|-
| 25||20||9||180||0.202||110
|-
| 26||20||5||180||0.194||95
|-
| 27||15||0||180||0.413||
|-
| 28||25||0||180||0.164||
|-
| 31||30||0||180||0.3||
|-
|}