View source for Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/IBSD of SiO2

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[[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|Go to 'IBE/IBSD Ionfab 300' equipment page]]


==Acceptance test for SiO2 deposition (2011) on IBE/IBSD Ionfab 300+)==
{| border="2" cellspacing="0" cellpadding="2" 
|-
!style="background:silver; color:black;" align="left"|. 
|style="background:WhiteSmoke; color:black"|'''Acceptance Criteria'''
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'''Acceptance Result 1'''
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'''Acceptance Result 2'''
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!style="background:silver; color:black;" align="left"|Substrate information 
|style="background:WhiteSmoke; color:black"|
*50 mm SSP Si wafer
*525 µm thick
*Supplied by Nanolab
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*100 mm SSP Si wafer
*525+-25 µm thick
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*100 mm SSP Si wafer
*525+-25 µm thick
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!style="background:silver; color:black" align="left" valign="top" |Material to be deposited
|style="background:WhiteSmoke; color:black"|
*SiO2
The purpose of the SiO2 is to be part of a mirror: <br\>
5 quarter wavelength pairs of <br\>
SiO2 <br\>
TiO2 <br\>
Extra quarter wavelength layer of <br\>
TiO2 <br\>
5 quarter wavelength pairs of <br\>
SiO2 <br\>
TiO2 <br\>
Design wavelength (for refractive indices and layer thicknesses): 1300nm <br\>
The acceptance criteria is set up for the single SiO2 and TiO2 layers. <br\>
Five runs in a row for each material.
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*SiO2
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*SiO2
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!style="background:silver; color:black" align="left" valign="top"|Deposition thickness
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*222 nm
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*~215 nm
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*224nm
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!style="background:silver; color:black" align="left" valign="top"|Deposition rate
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*6 nm/min
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*7.42 nm/min +- 0.04nm/min 
One standard deviation
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*7.73 nm/min
Only made once
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!style="background:silver; color:black" align="left" valign="top"|Thickness uniformity
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* <+-1%
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*+-(0.46% +-0.10%)
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*+-0.45%
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!style="background:silver; color:black" align="left" valign="top"|Reproducibility
|style="background:WhiteSmoke; color:black"|
*<+-1.5%
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*+-0.6%
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*Not measured
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!style="background:silver; color:black" align="left" valign="top"|Stress
|style="background:WhiteSmoke; color:black"|
*<500 MPa
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*~600 MPa
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*475 MPa
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!style="background:silver; color:black" align="left" valign="top"|Refractive index
|style="background:WhiteSmoke; color:black"|.
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*1.490+-0.004 (stddev wafer to wafer)
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*1.482+-0.002 (stddev on wafer)
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|}


{| border="2" cellspacing="1" cellpadding="3" align="left"
!
!Recipe 1
!Recipe 2
|-
|Platen angle
|15 degrees
|10 degrees
|-
|Platen rotation speed
|20 rpm
|20 rpm
|-
|Ar(N) flow	
|4 sccm
|4 sccm
|-
|Ar(dep. source) flow
|9 sccm
|8 sccm
|-
|I(N)
|310 mA
|320 mA
|-
|Power
|675 W
|700 W
|-
|I(B)
|310 mA
|280 mA
|-
|V(B)
|1200 V
|1100 V
|-
|Vacc(B)
|400 V
|400 V
|-
|Deposition time
|29 min
|37 min
|-
|}

<br clear="all" />

==Other results==
===Roughness of the surface===
Measured with the Optical profiler - PSI mode (on one sample from the acceptance test): Sa= 0.6 nm

===Uniformity and break down voltage ''by Mathias Engholm 2016-11-29''===
Mathias made 105.62nm SiO2 on a test silicon wafer and on his sample wafer. The sample wafer had gold/Cr on the surface and that had to be electrically isolated. The uniformity over the wafer of the oxide was 0.19% over 9 points - this is better than he has achieved when oxidizing in a furnace. He anodic bonded the wafer without problems. He measured the breakdown voltage and got 0.82+/+ 0.13 V/nm over 24 points. This is just as good as the oxide from the furnaces. Before his deposition he ran a 20 min heat up and 40min dummy deposition to clean the target. This was done with a bright new target and with the small deposition grids mounted.<br>
[[File:breakdownvoltage.png|thumb|left|400px| Breakdown voltage over the wafer, ''by Mathias Engholm 2016-11-29'']]
[[File:Ibsd uniformity SiO2.jpg|thumb|none|500px| Thickness uniformity over the wafer, ''by Mathias Engholm 2016-11-29'']]<br>