View source for Specific Process Knowledge/Thin film deposition/Deposition of Aluminium/Sputter rates for Al

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== Deposition rate of Al sputtering in the Wordentec ==

Deposition rate, film uniformity and grain size of Al depends on the process parameters (mainly on power and pressure) during the sputtering process.


From the experiment which set '''Pressure 10<sup>-3 </sup> mbar, Power 150 W'''

The deposition rate in the [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]] is established to be '''1.6 Å/s''' (in the center of the wafer, '''1.4 Å/s''' at the edge).


Measured October 2008, KNIL, DTU Danchip (now DTU Nanolab).