View source for Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/Al2O3 deposition using ALD2

'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/ALD2_(PEALD)/Al2O3_deposition_using_ALD2 click here]'''

=Results from the acceptance test=


==Al<sub>2</sub>O<sub>3</sub> deposition using TMA and H<sub>2</sub>O precursors==

The test was done with 500 cycles at 300 &deg;C where the growth rate was measured to be '''0.8544 nm/cycle'''.

{| border="2" cellspacing="2" cellpadding="5"  align="none"
|-
|
!TMA
!H<sub>2</sub>O
|-
!Nitrogen flow
|150 sccm
|200 sccm
|-
!Pulse time
|0.1 s
|0.1 s
|- 
!Purge time	
|3.0 s
|4.0 s
|-
|}
<gallery caption="" widths="500px" heights="500px" perrow="2">
image:Al2O3 with H2O Ellipsometer.png| Uniformity profile across 150 mm Si wafer based on 13 measurement points measured with ellipsometer. The uniformity is shown in the figure above and the thickness values can be seen in the table below. 
</gallery>

{| border="2" cellspacing="2" cellpadding="5"  align="none"
!Parameter
!Average
!Min.
!Max.
!Std.Dev
!%Range
|-
!Thickness (nm)
|48.72
|48.26
|49.37
|0.40
|2.2856
|}
<gallery caption="" widths="350px" heights="350px" perrow="2">
image:Al2O3 with H2O AFM.png| AFM measured roughness 0.240 nm.
</gallery>

<b>Pernille Voss Larsen, Mikkel Dysseholm Mar and Tanja Amport, DTU Nanolab, 2016-2017.</b>

==Al<sub>2</sub>O<sub>3</sub> with O<sub>3</sub>==
The test was done with 500 cycles at 300 &deg;C where the growth rate was measured to be '''0.0752 nm/cycle'''.

{| border="2" cellspacing="2" cellpadding="5"  align="none"
|- 
|
!TMA
!H<sub>2</sub>O
|-
!Nitrogen flow
|150 sccm
|200 sccm
|-
!Pulse time
|0.2 s
|0.1 s
|- 
!Purge time	
|3.0 s
|4.0 s
|-
|}
<gallery caption="" widths="500px" heights="500px" perrow="2">
image:Al2O3 with O3 Ellipsometer.png| Uniformity profile across 150 mm Si wafer based on 13 measurement points measured with ellipsometer.The uniformity is shown in the figure above and the thickness values can be seen in the table below.
</gallery>
{| border="2" cellspacing="2" cellpadding="5"  align="none"
!Parameter
!Average
!Min.
!Max.
!Std.Dev
!%Range
|-
!Thickness (nm)
|37.63
|36.51
|39.04
|0.81
|6.7448
|}
<gallery caption="" widths="350px" heights="350px" perrow="2">
image:Al2O3 with O3 AFM.png| 
</gallery>
The AFM measured roughness was 0.272 nm.

<b>Pernille Voss Larsen, Mikkel Dysseholm Mar and Tanja Amport, DTU Nanolab, 2016-2017.</b>


=Other references=

Since the ALD2 is very similar to the ALD1, especially if the thermal lid is installed, you might want to get further information, which can be found [http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/Al2O3_deposition_using_ALD here].