View source for Specific Process Knowledge/Thermal Process/C2 Furnace III-V oxidation

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The furnace is being tested.

==III-V Oxidation furnace (C2)==

The III-V Oxidaiont furnace (C2) is being used on August 2019 for wet oxidation of III-V devices instead of [http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=187 III-V Oven (D4)], for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes. 

The furnace is a Tempress horizontal furnace. A Sample is placed on the carrier quartz plate, which always be kept inside the furnace tube, and loaded to the hot furnace that filling with water vapour. The sample get oxidized at the desired time and then the furnace door will automatically open so that the oxidation stops and the sample is ready to be unloaded.
   
Before use, samples have to be cleaned. A short BHF dip can be used to remove any native oxide which can be difficult to penetrate by a wet thermal oxidation. 

Please check the cross contamination information in LabManager before you use the furnace. 

'''The user manual and contact information can be found in LabManager:'''

'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=88  III-V Oxidation furnace (C2)]'''

==Process knowledge==
*[[Specific_Process_Knowledge/Thermal_Process/Oxidation/Oxidation_on_III-V_oxidation_furnace_(C2)|Standard wet oxidation recipe on the III-V oxidation furnace]]

==Overview of the performance of the III-V oxidation furnace and some process related parameters==


{| border="2" cellspacing="0" cellpadding="2" 
|-
!style="background:silver; color:black;" align="center"|Purpose 
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*Wet oxidation of III-V devices
|-
!style="background:silver; color:black" align="center"|Performance
|style="background:LightGrey; color:black"|Lateral oxidation rate 
|style="background:WhiteSmoke; color:black"|
*Very sample dependent
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Process temperature
|style="background:WhiteSmoke; color:black"|
*420 <sup>o</sup>C
|-
|style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
*1 atm
|-
|style="background:LightGrey; color:black"|Gasses on the system
|style="background:WhiteSmoke; color:black"|
*N<sub>2</sub> (bubbler) 
*N<sub>2</sub>
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
*Several smaller samples (placed vertically on a quartz plate)
|-
| style="background:LightGrey; color:black"|Substrate materials allowed
|style="background:WhiteSmoke; color:black"|
*III-V devices
*Silicon 
|- 
|}


<!-- 
{| border="1" style="text-align: center; width: 500px; height: 100px;"
! colspan="5" style="text-align: center;" style="background: #efefef;" | III-V Oxidation Oven
|-
! scope="row" width="20%" |Volume
! width="30%" |Gas
! width="20%" |Maximum flow rate
! width="20%" |Filling time
! width="20%" |Temperature range
|-
|60 L
|H<sub>2</sub>O carried by N<sub>2</sub>
|900 sccm
|30 min
|?
|}
-->