View source for Specific Process Knowledge/Etch/III-V RIE/III V RIE ETCHES/Details SiO2 100

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==Reproducibility test (effect of chamber conditioning) ==

An O2 clean was made before each test set. That means before Rep01, Rep03 and Rep05. The recipes were exactly the same, but the etch rate decrease in the time (with changed conditioning we expect).



{| border="1" cellpadding="1" cellspacing="1" style="text-align:center;"
|+ '''Process parameters'''
|-
! rowspan="2" width="100" | Sample number
! rowspan="2" width="20" | Run number
! rowspan="2" width="20" | Time
! rowspan="2"  width="20" | Total flow rate
! rowspan="2" width="20" | Gas ratio
! rowspan="2" width="20" | Power
! rowspan="2" width="20" | Pressure
! rowspan="2" width="20" | CHF3 flow
! rowspan="2" width="20" | O2 flow
! colspan="3"            | SiO2
! rowspan="2" width="20" | Link to the process log
! rowspan="2" width="60" | Txt
|-
! width="40" | Thickness before 
! width="40" | Thickness after 
! width="40" | etch rate (nm/min) 
|-
! -    <!-- sample number -->
|Rep01        <!-- name of the run -->
| 5:41      <!-- time -->
| 17     <!-- total flow rate -->
| -      <!-- gas ratio -->
| 100       <!-- power -->
| 20      <!-- pressure -->
|  17    <!-- chf3 flow -->
!  0  <!-- O2 flow -->
| 411nm    <!-- thickness before sio2 -->
| 59,81nm   <!-- thickness after sio2 -->
| 61,8nm/min <!-- etch rate nm/sec sio2 -->
| Process log entry [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&usageid=344515]
|  <!-- txt -->
|-
! -    <!-- sample number -->
|Rep02        <!-- name of the run -->
| 3:00      <!-- time -->
| 17     <!-- total flow rate -->
| -      <!-- gas ratio -->
| 100       <!-- power -->
| 20      <!-- pressure -->
|  17    <!-- chf3 flow -->
!  0  <!-- O2 flow -->
| 411nm    <!-- thickness before sio2 -->
| 258,23nm   <!-- thickness after sio2 -->
| 50,92nm/min <!-- etch rate nm/sec sio2 -->
| Process log entry [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&usageid=344515]
|  <!-- txt -->
|-
|}

{| border="1" cellpadding="1" cellspacing="1" style="text-align:center;"
|+ '''Process parameters'''
|-
! rowspan="2" width="100" | Sample number
! rowspan="2" width="20" | Run number
! rowspan="2" width="20" | Time
! rowspan="2"  width="20" | Total flow rate
! rowspan="2" width="20" | Gas ratio
! rowspan="2" width="20" | Power
! rowspan="2" width="20" | Pressure
! rowspan="2" width="20" | CHF3 flow
! rowspan="2" width="20" | O2 flow
! colspan="3"            | SiO2
! rowspan="2" width="20" | Link to the process log
! rowspan="2" width="60" | Txt
|-
! width="40" | Thickness before 
! width="40" | Thickness after 
! width="40" | etch rate (nm/min) 
|-
! -    <!-- sample number -->
|Rep03        <!-- name of the run -->
| 3:00      <!-- time -->
| 17     <!-- total flow rate -->
| -      <!-- gas ratio -->
| 100       <!-- power -->
| 20      <!-- pressure -->
|  17    <!-- chf3 flow -->
!  0  <!-- O2 flow -->
| 411nm    <!-- thickness before sio2 -->
| 238,88nm   <!-- thickness after sio2 -->
| 57,37nm/min <!-- etch rate nm/sec sio2 -->
| Process log entry [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&usageid=344468]
|  <!-- txt -->
|-
! -    <!-- sample number -->
|Rep04        <!-- name of the run -->
| 3:00      <!-- time -->
| 17     <!-- total flow rate -->
| -      <!-- gas ratio -->
| 100       <!-- power -->
| 20      <!-- pressure -->
|  17    <!-- chf3 flow -->
!  0  <!-- O2 flow -->
| 411nm    <!-- thickness before sio2 -->
| 256,24nm   <!-- thickness after sio2 -->
| 51,59nm/min <!-- etch rate nm/sec sio2 -->
| Process log entry [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&usageid=344468]
|  <!-- txt -->
|-
|}

{| border="1" cellpadding="1" cellspacing="1" style="text-align:center;"
|+ '''Process parameters'''
|-
! rowspan="2" width="100" | Sample number
! rowspan="2" width="20" | Run number
! rowspan="2" width="20" | Time
! rowspan="2"  width="20" | Total flow rate
! rowspan="2" width="20" | Gas ratio
! rowspan="2" width="20" | Power
! rowspan="2" width="20" | Pressure
! rowspan="2" width="20" | CHF3 flow
! rowspan="2" width="20" | O2 flow
! colspan="3"            | SiO2
! rowspan="2" width="20" | Link to the process log
! rowspan="2" width="60" | Txt
|-
! width="40" | Thickness before 
! width="40" | Thickness after 
! width="40" | etch rate (nm/min) 
|-
! -    <!-- sample number -->
|Rep05        <!-- name of the run -->
| 3:00      <!-- time -->
| 17     <!-- total flow rate -->
| -      <!-- gas ratio -->
| 100       <!-- power -->
| 20      <!-- pressure -->
|  17    <!-- chf3 flow -->
!  0  <!-- O2 flow -->
| 411nm    <!-- thickness before sio2 -->
| 232,16nm   <!-- thickness after sio2 -->
| 59,61nm/min <!-- etch rate nm/sec sio2 -->
| Process log entry [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&usageid=344515]
|  <!-- txt -->
|-
! -    <!-- sample number -->
|Rep06        <!-- name of the run -->
| 3:00      <!-- time -->
| 17     <!-- total flow rate -->
| -      <!-- gas ratio -->
| 100       <!-- power -->
| 20      <!-- pressure -->
|  17    <!-- chf3 flow -->
!  0  <!-- O2 flow -->
| 411nm    <!-- thickness before sio2 -->
| 258,07nm   <!-- thickness after sio2 -->
|50,98nm/min <!-- etch rate nm/sec sio2 -->
| Process log entry [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&usageid=344515]
|  <!-- txt -->
|-
! -    <!-- sample number -->
|Rep07        <!-- name of the run -->
| 3:00      <!-- time -->
| 17     <!-- total flow rate -->
| -      <!-- gas ratio -->
| 100       <!-- power -->
| 20      <!-- pressure -->
| 17    <!-- chf3 flow -->
!  0  <!-- O2 flow -->
| 411nm    <!-- thickness before sio2 -->
| 264,22nm   <!-- thickness after sio2 -->
| 48,93nm/min <!-- etch rate nm/sec sio2 -->
| Process log entry [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&usageid=344515]
|  <!-- txt --> 
|-
|}

== Thin oxide etch with e-beam mask ==
{| border="1" cellpadding="1" cellspacing="1" style="text-align:center;"
|+ '''Process parameters'''
|-
! rowspan="2" width="100" | Sample number
! rowspan="2" width="20" | Run number
! rowspan="2" width="20" | Time
! rowspan="2"  width="20" | Total flow rate
! rowspan="2" width="20" | Gas ratio
! rowspan="2" width="20" | Power
! rowspan="2" width="20" | Pressure
! rowspan="2" width="20" | CHF3 flow
! rowspan="2" width="20" | O2 flow
! colspan="3"            | SiO2
! colspan="3"            | E-beam resist
! rowspan="2" width="20" | Selectivity
! rowspan="2" width="20" | Link to the process log
! rowspan="2" width="60" | Txt
|-
! width="40" | Thickness before 
! width="40" | Thickness after 
! width="40" | etch rate (nm/min) 
! width="40" | Thickness before 
! width="40" | Thickness after 
! width="40" | etch rate (nm/min) 
|-
! -    <!-- sample number -->
|        <!-- name of the run -->
| 1:00      <!-- time -->
| 17     <!-- total flow rate -->
| -      <!-- gas ratio -->
| 100       <!-- power -->
| 20      <!-- pressure -->
|  17    <!-- chf3 flow -->
!  0  <!-- O2 flow -->
| -     <!-- thickness before sio2 -->
|   -   <!-- thickness after sio2 -->
| 50/35 <!-- etch rate nm/sec sio2 -->
| - <!-- thickness before resist -->
| -	<!-- thickness after resist -->
|/12  -<!-- etch rate nm/sec resist -->
|~3  <!-- Selectivity -->
|  Process log entry 
|   Structured sample<!-- txt --> |        <!-- link processes -->
|-
! -    <!-- sample number -->
|        <!-- name of the run -->
| 1:00      <!-- time -->
| 17     <!-- total faz flow -->
| -      <!-- gaz ratio -->
| 100       <!-- power -->
| 50      <!-- pressure -->
|  17    <!-- chf3 flow -->
!  0  <!-- O2 flow -->
| -     <!-- thickness before sio2 -->
|   -   <!-- thickness after sio2 -->
| 0 <!-- etch rate nm/sec sio2 -->
| - <!-- thickness before resist -->
| -	<!-- thickness after resist -->
|  -<!-- etch rate nm/sec resist -->
|  - <!-- Selectivity -->
|  Process log entry 
|   Structured sample<!-- txt --> |  no etching done (deposition)      <!-- link processes -->
|-

|}