View source for Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinano3

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== The Sinano3.0 recipe ==
<!-- revised 1/6-2015 by jmli -->
{| border="2" cellpadding="2" cellspacing="1" 
|+ '''Recipe Sinano3.0'''
|-
! rowspan="6" align="center"| Recipe
| Gas
| BCl<sub>3</sub> 5 sccm, HBr 15 sccm
|-
| Pressure
| 2 mTorr, Strike 3 secs @ 5 mTorr
|-
| Power
| 900 W CP, 50 W PP
|- 
| Temperature
| 20 degs
|-
| Hardware
| 100 mm Spacers
|-
| Time
| 150 secs
|-
! rowspan="4" align="center"| Conditions
| Run ID
| 417, 418 and 419
|-
| Conditioning
| Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
|-
| Mask
| 110 nm zep etched down to 64 nm
|-
| Wafer
| WF_2A#4_feb06_2011 
|}


<gallery caption="The results of the Sinano3.0 recipe" widths="250" heights="200" perrow="3">
image:WF_2A4_feb06_2011-030.jpg|The 30 nm trenches
image:WF_2A4_feb06_2011-060.jpg|The 60 nm trenches
image:WF_2A4_feb06_2011-090.jpg|The 90 nm trenches
image:WF_2A4_feb06_2011-120.jpg|The 120 nm trenches
image:WF_2A4_feb06_2011-150.jpg|The 150 nm trenches
BCl3 5 sccm, HBr 15 sccm, 2 mTorr, Strike 3 secs @ 5 mTorr, 900 W CP, 50 W PP, 20 degs, 180 secs
</gallery>


{| {{table}}
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width'''
| align="center" style="background:#f0f0f0;"|''''''
| align="center" style="background:#f0f0f0;"|''''''
| align="center" style="background:#f0f0f0;"|'''30'''
| align="center" style="background:#f0f0f0;"|'''60'''
| align="center" style="background:#f0f0f0;"|'''90'''
| align="center" style="background:#f0f0f0;"|'''120'''
| align="center" style="background:#f0f0f0;"|'''150'''
| align="center" style="background:#f0f0f0;"|'''Average'''
| align="center" style="background:#f0f0f0;"|'''Std. dev.'''
|-
| Etch rate||nm/min||||236||307||333||341||339||311||44
|-
| Sidewall angle||degs||||84||82||83||81||80||82||2
|-
| CD loss||nm/edge||||28||46||62||88||103||65||30
|-
| CD loss foot||nm/edge||||28||46||62||88||103||65||30
|-
| Bowing||||||21||32||35||33||36||31||6
|-
| Bottom curvature||||||-30||-27||-18||14||16||-9||22
|-
| Zep etch rate||||||||||||||||46||
|- 
|}

== The Sinano3.0 recipe ==

{| border="2" cellpadding="2" cellspacing="1" 
|+ '''Recipe Sinano3.0'''
|-
! rowspan="6" align="center"| Recipe
| Gas
| BCl<sub>3</sub> 5 sccm, HBr 15 sccm
|-
| Pressure
| 2 mTorr, Strike 3 secs @ 5 mTorr
|-
| Power
| 900 W CP, 50 W PP
|- 
| Temperature
| 20 degs
|-
| Hardware
| 100 mm Spacers
|-
| Time
| 150 secs
|-
! rowspan="4" align="center"| Conditions
| Run ID
| 417, 418 and 419
|-
| Conditioning
| Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
|-
| Mask
| 110 nm zep etched down to 64 nm
|-
| Wafer
| WF_2A#4_feb06_2011 
|}


<gallery caption="The results of the Sinano3.0 recipe" widths="250" heights="200" perrow="3">
image:WF_2A4_feb06_2011-030.jpg|The 30 nm trenches
image:WF_2A4_feb06_2011-060.jpg|The 60 nm trenches
image:WF_2A4_feb06_2011-090.jpg|The 90 nm trenches
image:WF_2A4_feb06_2011-120.jpg|The 120 nm trenches
image:WF_2A4_feb06_2011-150.jpg|The 150 nm trenches
BCl3 5 sccm, HBr 15 sccm, 2 mTorr, Strike 3 secs @ 5 mTorr, 900 W CP, 50 W PP, 20 degs, 180 secs
</gallery>


{| {{table}}
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width'''
| align="center" style="background:#f0f0f0;"|''''''
| align="center" style="background:#f0f0f0;"|''''''
| align="center" style="background:#f0f0f0;"|'''30'''
| align="center" style="background:#f0f0f0;"|'''60'''
| align="center" style="background:#f0f0f0;"|'''90'''
| align="center" style="background:#f0f0f0;"|'''120'''
| align="center" style="background:#f0f0f0;"|'''150'''
| align="center" style="background:#f0f0f0;"|'''Average'''
| align="center" style="background:#f0f0f0;"|'''Std. dev.'''
|-
| Etch rate||nm/min||||236||307||333||341||339||311||44
|-
| Sidewall angle||degs||||84||82||83||81||80||82||2
|-
| CD loss||nm/edge||||28||46||62||88||103||65||30
|-
| CD loss foot||nm/edge||||28||46||62||88||103||65||30
|-
| Bowing||||||21||32||35||33||36||31||6
|-
| Bottom curvature||||||-30||-27||-18||14||16||-9||22
|-
| Zep etch rate||||||||||||||||46||
|- 
|}