View source for Specific Process Knowledge/Etch/ICP Metal Etcher/Examples of End point detection

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Information on how to use the optical endpoint system, please take a look here: [[Specific Process Knowledge/Etch/DryEtchProcessing/OES]]

==Cr etch with end point on SiO2==
''Done April 2023 by bghe'' <br>
[[File:End point of Cr down to SiO2 cut.jpg|1600px]] <br>
The above images shows a view from Spectral View during etching Cr with DUV resist as masking material of a 6" wafer with more than to 50% open area. The standard Cr etch was used. The endpoint was most clearly seen with the parameters:
*Cr5208av (Average A for region Cr_5208)
*Cr_Avg_5208
*normClOverCr (ScalePct(CrOverCl, 10,20,100)
*smCr over Cl (Avg2(normCrOverCl, 50)

==Barc etch==
Configuration file: bghe-all-1<br>
Activate the equations: 
*Sum_C2
*Median:C2_trend
*Media_C2 (Eq: Median(C2_5165av,50))