View source for Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE

'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/AOE_(Advanced_Oxide_Etch)/Silicon_Nitride_Etch_using_AOE click here]''' 

==Silicon nitride - fast - with resist mask==
{| border="2" cellspacing="2" cellpadding="3" 
!Parameter
|Recipe name: '''SiN_res''' ('''SiN''' etch with '''res'''ist mask)
  
|-
|Coil Power [W]
|1300

|-
|Platen Power [W]
|350

|-
|Platen temperature [<sup>o</sup>C]
|0

|-
|He flow [sccm]
|174

|-
|CF<sub>4</sub> flow [sccm]
|40

|-
|Pressure [mTorr]
|4

|-
|}

{| border="2" cellspacing="2" cellpadding="3"
!Typical results
!Test Results

|-
|Etch of Si3N4 with DUV mask
|[[/Nitride etch with DUV mask#Silicon nitride etch with STS recommended silicon nitride recipe|See images here]]
|-
|Etch rate of Si3N4
|'''~435nm/min (50% etch load) ''Marts 2016 by bghe@nanolab'' '''

|-
|Etch rate of Silicon
|'''~264nm/min (50% etch load) ''Marts 2016 by bghe@nanolab'''''

|-
|Etch rate of DUV resist]
|'''~600nm/min (50% etch load) ''Marts 2016 by bghe@nanolab''''' 



|-
|Profile [<sup>o</sup>]
|close to 90 degrees see the images
|-
|}

<br clear="all" />

==Small variation of the Silicon nitride etch SiN_res - with Cr mask==
''Done by Anders Simonsen @nbi.dk''

{| border="2" cellspacing="2" cellpadding="3" 
!Parameter
|Recipe name: '''SiN_AS'''
  
|-
|Coil Power [W]
|1300

|-
|Platen Power [W]
|350

|-
|Platen temperature [<sup>o</sup>C]
|5

|-
|He flow [sccm]
|174

|-
|CF<sub>4</sub> flow [sccm]
|40
|-
|O2 flow [sccm]
|4
|-
|Pressure [mTorr]
|4

|-
|}

{| border="2" cellspacing="2" cellpadding="3"
!Typical results
!Test Results

|-
|Etch of Si3N4 with Cr mask
|See results here:
* [[:File:report_summer2022 Anders Simonsen bghe edits.pdf | Cr etch development and silicon nitride report summery by Anders Simonesen, summer of 2022 ]]
* [[Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium/Cr etch data from AS |Here are the raw test data and SEM images from Anders Simonsen]]

|-
|Etch rate of Si3N4
|'''~420 nm/min ''Summer 2022 by asimonsen@nbi.ku'' '''

|-
|Etch rate of Cr
|'''1:17''', see discussion in the summery 

|-
|Profile [<sup>o</sup>]
|close to 90 degrees see the images in the links
|-
|}

<br clear="all" />

==Silicon nitride etch with the standard silicon oxide etch==
The standard recipe for oxide etching with photo resist as masking material is called: SiO2_res. It can also be used for nitride etching. The parameters and results so fare are as follows:


{| border="2" cellspacing="2" cellpadding="3" 
!Parameter
|Recipe name: '''SiO2_res''' ('''SiO2''' etch with '''res'''ist mask)
  
|-
|Coil Power [W]
|1300

|-
|Platen Power [W]
|200

|-
|Platen temperature [<sup>o</sup>C]
|0

|-
|He flow [sccm]
|174

|-
|C<sub>4</sub>F<sub>8</sub> flow [sccm]
|5

|-
|H<sub>2</sub> flow [sccm]
|4

|-
|Pressure [mTorr]
|4

|-
|}


{| border="2" cellspacing="2" cellpadding="3"
!Typical results
!Test Results
|-
|Etch rate of Silicon rich nitride from furnace B2
|136nm was etched in 1min (whole wafer) - etched in October 2015 by ''bghe@nanolab''
|-
|Etch of Si3N4 with DUV mask
|[[/Nitride etch with DUV mask#Silicon nitride etch with the standard silicon oxide etch|See images here]]


|-
|Etch rate of thermal oxide
|'''~230nm/min (5% etch load)'''

|-
|Selectivity SiO2 to AZ resist [:1]
|'''~3''' 

|-
|Selectivity SiO2 to DUV resist [:1]
|'''~2.0''' - tested May 2013 by Christian Østergaard @nanotech. 

|-
|Profile [<sup>o</sup>]
|'''~90'''
|-
|}

<br clear="all" />

==Silicon nitride etch with lower etch rate== 
Test of etch in silicon nitride (LPCVD). 105nm nitride had to be removed - it was removed after 1min and 40s with a very small over etch in Si.

{| border="2" cellspacing="2" cellpadding="3" 
!Parameter
|Recipe name: '''Nitr_res''' (Silicon '''Nitr'''ide etch using '''res'''ist mask)
|-
|Coil Power [W]
|700
|-
|Platen Power [W]
|100
|-
|Platen temperature [<sup>o</sup>C]
|0
|-
|C<math>_4</math>F<math>_8</math> flow [sccm]
|5
|-
|He flow [sccm]
|174
|-
|H<math>_2</math> flow [sccm]
|4
|-
|Pressure [mTorr]
|4
|-
|}


{| border="2" cellspacing="2" cellpadding="3"
!Typical results
! Resist mask
! Resist mask
|-
|Silicon nitride (LPCVD) etch rate 
|~60 nm/min
|99-108 nm/min (LN/BGHE 20130514)    
|-
|Selectivity to photo resist [:1]
|? 
|~between 2.5 and 4.0 (LN/BGHE 20130512)  
|-
|Etch rate in Si
|?
|?
|-
|Etch rate in SiO2 
|? 
|?  
|-
|Profile [<sup>o</sup>]
|not tested
|not tested
|-
|Etch uniforminty over a wafer [<sup>o</sup>]
|not tested
|&plusmn; 1.1% to &plusmn;1.8% (Eric Jensen @nanotech, oct. 2013)
|-

|Images
|.
|.
|-
|Comments
|.
|.
|-
|}