View source for Specific Process Knowledge/Etch/DRIE-Pegasus/SOIetch

{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''SOI etch specifications'''
|-
! Parameter
! Specification
! Average result 
|-
! Etch rate (µm/min)  
| > 10
| 10.7
|-
! Etched depth (µm)
| 100
| 107
|-
! Scallop size (nm)
| < 800
| 685
|-
! Profile (degs)
| 91 +/- 1
| 90.7
|-
! Selectivity to AZ photoresist 
| > 100
| 183
|-
! Undercut (µm)
| <1.5
| 0.89
|-
! Uniformity (%)
| < 3.5
| 2.7
|-
! Repeatability (%)
| <4
| 0.47
|-
|}




{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''SOI etch recipe'''
|-
|-
! width="120" | Main etch (D->E)  
! width="120" | Etch
! width="120" | Dep
|-
! Gas flow (sccm) 
| SF<sub>6</sub> 400 O<sub>2</sub> 40
| C<sub>4</sub>F<sub>8</sub> 250
|-
! Cycle time (secs) 
| 3.0
| 2.0
|-
! Pressure (mtorr) 
| 30
| 25
|-
! Coil power (W) 
| 2800 
| 2000
|-
! LF Platen power (W)
| 75
| 0
|-
! LF Platen Pulsing software set-up
| 0.025s, 75%
| -
|-
! Cycles  
| colspan="2" | 96 (process time 08:00)
|-
! Common 
| colspan="2" | Temperature 20 degs, HBC 10 torr, Long funnel, with baffle & 100 mm spacers
|}