View source for Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si

'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si click here]''' 

==Test of the deposition rate of Silicon and film characteristics==
'''''The work in this section was done by Kristian Hagsted Rasmussen @DTU Danchip before 2012 with followup by Berit Herstrøm @DTU Nanolab.'''''

Please note that it is no longer possible to deposit Si with the Ion beam etcher here at Nanolab.

{| border="2" cellspacing="1" cellpadding="3" align="left"
!&nbsp;
!Recipe 2 - with the small grids)
|-
|Platen angle
|10 degrees
|-
|Platen rotation speed
|20rpm
|-
|Ar(N) flow	
|4 sccm
|-
|Ar(dep. source) flow
|8 sccm
|-
|I(N)
|240mA
|-
|Power setting
|700W
|-
|I(B)
|200mA
|-
|V(B)
|1100V
|-
|Vacc(B)
|400V
|-
|}

<br clear="all" />

===Results with recipe 2 and the small grids===

{| border="2" cellspacing="1" cellpadding="3" align="left"
!Depostion time
!10 min (2016-08-04 bghe)

|-
|Characterization method
|Ellipsometer 3 angles
|-
|Deposition thickness
|50 nm (2016-08-04 bghe)

|-
|Deposition rate	
|5.0 nm/min
|-
|Refractive index @632nm
|
n=? <br/>
k=?
|-
|Refractive index @1000nm <br/>
@950nm using the ellipsometer
|
n=? <br/>
k=?
|-
|Refractive index @1550nm <br/>
|
n=? <br/>
k=?
|-
|}

<br clear="all" />


===Recipe===

{| border="2" cellspacing="1" cellpadding="3" align="left"
!&nbsp;
!Recipe 1 - with the large grids)
|-
|Platen angle
|10 degrees
|-
|Platen rotation speed
|20rpm
|-
|Ar(N) flow	
|4 sccm
|-
|Ar(dep. source) flow
|8 sccm
|-
|I(N)
|320mA
|-
|Power
|700W
|-
|I(B)
|280mA
|-
|V(B)
|1100V
|-
|Vacc(B)
|400V
|-
|}

<br clear="all" />

===Results with recipe 1 and the large grids===

{| border="2" cellspacing="1" cellpadding="3" align="left"
!Depostion time
!10 min (before 2013)
!30 min (before 2013)
!30 min (before 2013)
!30 min (2013-10-4)
|-
|Characterization method
|FilmTek
|FilmTek
|Ellipsometer 3 angles
|Ellipsometer 3 angles
|-
|Deposition thickness
|71 nm
|229 nm
|242 nm
|194 nm (2013-10-4)
|-
|Deposition rate	
|7.1 nm/min
|7.6 nm/min
|8.1 nm/min
|6.5 nm/min
|-
|Refractive index @632nm
|
n=4.55 <br/>
k=0.826
|
n=4.916 <br/>
k=0.547
|
n=4.589 <br/>
k=0.479
|
n=4.625 <br/>
k=0.653
|-
|Refractive index @1000nm <br/>
@950nm using the ellipsometer
|
n=? <br/>
k=?
|
n=4.297 <br/>
k=0.0836
|
n=4.136 <br/>
k=0.189
|
n=4.206 <br/>
k=0.183
|-
|Refractive index @1550nm <br/>
|
n=? <br/>
k=?
|
n=? <br/>
k=?
|
n=? <br/>
k=?
|
n=3.970 <br/>
k=0.062
|-
|Roughness
|6.1 nm
|10.4 nm
|1.1 nm
|0.9 nm
|-
|}

<br clear="all" />