View source for Specific Process Knowledge/Thin film deposition/Deposition of ITO

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==Deposition of ITO==
ITO (indium tin oxide) can be deposited by sputtering here at DTU Nanolab. An ITO target is used and it may be sputtered either non-reactively in Ar or reactively in a mixture of Ar and O<sub>2</sub>.

We have acquired a lot of knowledge about ITO deposition in our Cluster Lesker system, and results are summarized on a page here:

*[[Specific_Process_Knowledge/Thin_film_deposition/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)|Sputtering of ITO in Sputter-System Metal-Oxide (PC1)]].

==Comparison of the methods for deposition of ITO==
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![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]]
![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-System Metal-Oxide(PC1)]]
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!Generel description
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*RF sputtering of an ITO target - reactive sputtering possible
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*RF sputtering of an ITO target - reactive sputtering possible (not recommended due to arching)
*Pulsed DC sputtering of an ITO target - reactive sputtering possible
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!Stoichiometry
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*Not known
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*In:Sn:O ~ 39:3:58. Can be tuned by altering [[Specific_Process_Knowledge/Thin_film_deposition/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)#Stoichiometry|deposition conditions]].
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!Film Thickness
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*few nm - ~ 200 nm
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*few nm - ~ 1 μm

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!Deposition rate
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* 0.5-2 nm/min
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* at least up to ~ 10 nm/min ([[Specific_Process_Knowledge/Thin_film_deposition/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)|see conditions]])
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!Step coverage
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*unknown
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*unknown
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!Process Temperature
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* Up to 400 °C (tool limit)
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* Up to 600 °C (tool limit)
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!Substrate size
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* chips
* 1x 100 mm wafer
* 1x 150 mm wafer
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* chips
* 10x 100 mm wafer
* 10x 150 mm wafer
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!'''Allowed materials'''
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*almost any
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*almost any that does not degas. Note special carrier for III-V materials. See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet].
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