View source for Specific Process Knowledge/Thin film deposition/Deposition of Ruthenium

== Deposition of Ru ==
Ruthenium can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment:


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! 

! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
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! General description
|E-beam deposition of Ru
(line-of-sight deposition)
|Sputter deposition of Ru
(not line-of-sight deposition)

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!Pre-clean
|Ar ion bombardment
|RF Ar clean

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!Layer thickness
|10Å to 1µm*
|10Å to 1µm** 

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! Deposition rate
|0.5Å/s to 10Å/s
| ~1Å/s
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! Batch size
|
*Up to 4x6" wafers
*Up to 3x8" wafers (ask for holder)
*smaller pieces
|
*smaller pieces
*Up to 1x6" wafers
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!Allowed materials

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*Silicon
*Silicon oxide
*Silicon (oxy)nitride
*Photoresist
*PMMA
*Mylar
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]

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* Silicon
* Silicon oxide 
* Silicon (oxy)nitride 
* Photoresist 
* PMMA 
* Mylar 
* SU-8 
* Metals 

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! Comment
|Please contact the thin film group before depositing Ru, even if Ru is in the machine. 
The current target material belongs to a specific customer.
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'''**''' ''To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)''

'''*''' ''To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)''