View source for Specific Process Knowledge/Etch/ICP Metal Etcher/silicon nitride

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===Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess ===
This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented. The same recipe is being used for SiO2, see the result for that [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide#Slow etch of SiO2 with resist as masking material-using a 6.22 carrier wafer with recess|here]]



{| border="2" cellspacing="2" cellpadding="3" 
!Parameter
!A slow etch with carrier
|-
|Coil Power [W]
|200
|-
|Platen Power [W]
|25
|-
|Platen temperature [<sup>o</sup>C]
|0
|-
|CF<sub>4</sub> flow [sccm]
|20
|-
|H<sub>2</sub> flow [sccm]
|10
|-
|Pressure [mTorr]
|3
|-
|}


{| border="2" cellspacing="2" cellpadding="3"
!Results 
!Test on wafer with 20% load, ''by Izzet Yildiz @Nanotech''
!Test by BGHE @nanolab
|-
|Etch rate of LPCVD nitride
|'''60-65 nm/min (20% etch load) (Feb. 2014)''' 
|&nbsp;
|-
|Selectivity to  resist [SiN : AZ resist]
|'''1:0.75'''
|&nbsp;
|-
|Wafer uniformity (100mm)
|'''?'''
|&nbsp;
|-
|Profile [<sup>o</sup>]
|?
|&nbsp;
|-
|Wafer uniformity map (click on the image to view a larger image)
|not measured 
|&nbsp;
|-
|SEM profile images
|Not measured
|&nbsp;
|-
|Etch rate in Barc
|&nbsp;
|~50 nm/min (Date: 2014-09-09)
|-
|Etch rate in KRF resist
|&nbsp;
|~40 nm/min (Date: 2014-09-09)
|-
|}

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