View source for Specific Process Knowledge/Characterization/III-V ECV-profiler

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==III-V ECV-profiler==

[[file:PN4300_ECV_profiler.JPG|300px|right|thumb|ECV profiler]]
[[file:PN4300_cell_compartment.jpg‎ |300px|right|thumb|ECV cell compartment]]
[[file:PN4300_doping_profile_example.jpg‎ |300px|right|thumb|Doping profile example. Three n-doped layers and substrate separated by undoped layers]]

The ECV (Electrochemical Capacitance-Voltage) technique is used to measure carrier-density as a function of depth (doping-profile) on planar semiconductor structures - usually III-V compound semiconductors.

''The ECV-profiler is maintained by DTU fotonik (not DTU Nanolab) and is therefor not in LabManager!''

ECV is a destructive technique requiring a sample size of at least 5x5mm and good skills to obtain reproduceable and reliable results. The sample is placed in a electrochemical cell and electrical contacted to form a capacitor. This is done on one side through the electrolyte and on the other side via a ohmic contact on either the front- or the backside (preferred) of the wafer.

==Equipment performance and process related parameters==

{| border="2" cellspacing="0" cellpadding="10" 
|-
!style="background:silver; color:black" align="left" rowspan="5" valign="top" |Performance
|style="background:LightGrey; color:black"|Excitation
|style="background:WhiteSmoke; color:black"|
*halogen white light source for n-type measurements to generate holes for the etching process
|-
|style="background:LightGrey; color:black"|Detection
|style="background:WhiteSmoke; color:black"|
* between 10^13 to 10^20 carriers/cm^3
|-
|style="background:LightGrey; color:black"|Sample size
|style="background:WhiteSmoke; color:black"|
*from 5x5mm (10x10mm recommended) up to 2" approximately
|-
|style="background:LightGrey; color:black"|Resolution
|style="background:WhiteSmoke; color:black"|
* Minimum depth resolution ~1 nm
* Measurement area: 
** small ring: Ø 1 mm
** large ring: Ø 3 mm
|-
|style="background:LightGrey; color:black"|Carrier density accuracy
|style="background:WhiteSmoke; color:black"|
* very dependent on sample. Uncertainty can easily be +-50%. 
|-
|-
!style="background:silver; color:black" align="left" rowspan="2" valign="top" |Materials
|style="background:LightGrey; color:black"|Allowed substrate materials
|style="background:WhiteSmoke; color:black"|
* III-V
* Silicon
|}