View source for Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly3

<!--Checked for updates on 11/2-2019 - ok/jmli -->
{| border="2" cellpadding="0" cellspacing="0" style="text-align:center;"
|+ '''Process runs'''
|-
! rowspan="2" width="40"| Date
! colspan="4" width="120"| Substrate Information
! colspan="4" | Process Information
! rowspan="2" width="500" |SEM Images
|-
! width="30" | Wafer info
! width="40" | Mask
! width="40" | Material/ Exposed area
! width="40" | Tool / Operator
! width="40" | Conditioning
! width="40" | Recipe
! width="40" | Wafer ID
! width="40" | Comments
|-
| 3/12-2014
| 1/4 6" Wafer with 210 nm oxide and 1800 nm polysilicon CB on oxide carrier
| standard stepper mask (50 nm barc + 320 nm krf)
| Si / 50+ % 
| Pegasus/jmli
| 10 minute TDESC clean + 45 sec barc etch
| danchip/jml/showerhead/Cpoly3, 20 cycles or 2:12 minutes 
| S004730
| New showerhead 
| 
[[file:S004730-01.jpg|150px|frameless ]]
[[file:S004730-02.jpg|150px|frameless ]]
[[file:S004730-03.jpg|150px|frameless ]]
[[file:S004730-04.jpg|150px|frameless ]]
[[file:S004730-05.jpg|150px|frameless ]]
[[file:S004730-06.jpg|150px|frameless ]]

|-
|}