View source for Specific Process Knowledge/Thin film deposition/PECVD/Doping

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==Boron-doping by use of BSG glass deposited in PECVD2==

''Results from Joachim Dahl Thomsen, Nanotech, 2014''

===Recipe===
{| border="1" cellspacing="0" cellpadding="7" width="800" style="text-align:center;"
|-
|Recipe name 
|SiH<sub>4</sub> flow [sccm]
|N<sub>2</sub>O flow [sccm]
|N2 flow [sccm]
|B<sub>2</sub>H<sub>6</sub> flow [sccm]
|PH<sub>3</sub> flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|- 
|1PBSG
|17
|1600
|0
|120, 130, 140, 160, 240
|0
|400
|380
|BSG glass for driving in boron in Silicon
|}

5 tests were made where only the B<sub>2</sub>H<sub>6</sub> flow was changed for each deposition (120sccm,130sccm,140sccm,160sccm,240sccm). All deposition times were 2 min, resulting in 440 nm Oxide.
The wafers were annealed in Anneal Oxide Furnace (C1) at 1000°C for 85 min to drive in the boron and the oxide was subsequently etched in BHF. The wafers were then analyzed by SIMS and the results are shown in the figure below:


[[image:SIMS2.png|627x424px|left|thumb|Boron concentration measured by SIMS. Results from Joachim Dahl Thomsen, Nanotech, 2014.]]

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==Boron-doping by use of BSG glass deposited in PECVD2==

''Results from Trine Holm Christensen, Space, Feb. 2015''

===Recipe===
{| border="1" cellspacing="0" cellpadding="7" width="800" style="text-align:center;"
|-
|Recipe name 
|SiH<sub>4</sub> flow [sccm]
|N<sub>2</sub>O flow [sccm]
|N2 flow [sccm]
|B<sub>2</sub>H<sub>6</sub> flow [sccm]
|PH<sub>3</sub> flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|- 
|1PBSG
|17
|1600
|0
|120, 130, 140
|0
|400
|380
|BSG glass for driving in boron in Silicon
|}

3 tests were made where only the B<sub>2</sub>H<sub>6</sub> flow was changed for each deposition (120sccm,130sccm,140sccm,160sccm,240sccm). All deposition times were 2 min, resulting in 440 nm Oxide.
The wafers were going through several annealing and oxidation step:

'''The total thermal budget for the wafers:'''

'''Anneal in Furnace (C1):''' ANN1000, 30 min in N<sub>2</sub>, strip of oxide in a 25 min BHF etch.

'''Wet oxidation in Furnace (C1):''' WET1050, 30 min, no further anneal

'''Anneal in Furnace (C1):''' ANN950, 60 min in N<sub>2</sub>

The wafers were then analyzed by SIMS and the results are shown in the figure below:

[[image:PECVD_Boron_doping_profiles.jpg|627x424px|left|thumb|Boron concentration measured by SIMS. Results from Trine Holm Christensen, Space, Feb. 2015.]]

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