View source for Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly2


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|+ '''Process runs'''
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! rowspan="2" width="40"| Date
! colspan="4" width="120"| Substrate Information
! colspan="4" | Process Information
! rowspan="2" width="500" |SEM Images
|-
! width="30" | Wafer info
! width="40" | Mask
! width="40" | Material/ Exposed area
! width="40" | Tool / Operator
! width="40" | Conditioning
! width="40" | Recipe
! width="40" | Wafer ID
! width="40" | Comments
|-
| 3/12-2014
| 1/4 6" Wafer with 210 nm oxide and 1800 nm polysilicon CB on oxide carrier
| standard stepper mask (50 nm barc + 320 nm krf)
| Si / 50+ % 
| Pegasus/jmli
| 10 minute TDESC clean + 45 sec barc etch
| danchip/showerhead/polySi etch DUV mask, 20 cycles or 2:08 minutes 
| S004729
| New showerhead 
| 
[[file:S004729-01.jpg|150px|frameless ]]
[[file:S004729-02.jpg|150px|frameless ]]
[[file:S004729-03.jpg|150px|frameless ]]

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