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14:44, 21 January 2026 Prakus talk contribs created page File:Au wire 011.png (File uploaded with MsUpload)
14:44, 21 January 2026 Prakus talk contribs uploaded File:Au wire 011.png (File uploaded with MsUpload)
14:44, 21 January 2026 Prakus talk contribs created page File:Au wire 004.png (File uploaded with MsUpload)
14:44, 21 January 2026 Prakus talk contribs uploaded File:Au wire 004.png (File uploaded with MsUpload)
14:06, 21 January 2026 Prakus talk contribs created page File:Au wire 024.png (File uploaded with MsUpload)
14:06, 21 January 2026 Prakus talk contribs uploaded File:Au wire 024.png (File uploaded with MsUpload)
14:02, 21 January 2026 Prakus talk contribs created page File:Au wire 009.png (File uploaded with MsUpload)
14:02, 21 January 2026 Prakus talk contribs uploaded File:Au wire 009.png (File uploaded with MsUpload)
13:57, 21 January 2026 Prakus talk contribs created page File:Au wire 020.png (File uploaded with MsUpload)
13:57, 21 January 2026 Prakus talk contribs uploaded File:Au wire 020.png (File uploaded with MsUpload)
13:57, 21 January 2026 Prakus talk contribs created page File:Au wire 006.png (File uploaded with MsUpload)
13:57, 21 January 2026 Prakus talk contribs uploaded File:Au wire 006.png (File uploaded with MsUpload)
12:49, 20 January 2026 Prakus talk contribs created page File:Au wire 006.tif (File uploaded with MsUpload)
12:49, 20 January 2026 Prakus talk contribs uploaded File:Au wire 006.tif (File uploaded with MsUpload)
12:44, 19 January 2026 User account Diomelo talk contribs was created automatically
13:39, 16 January 2026 User account Idahv talk contribs was created automatically
16:14, 14 January 2026 User account Fedca talk contribs was created automatically
09:39, 14 January 2026 Jehem talk contribs created page File:Developer ebeam v1.jpg
09:39, 14 January 2026 Jehem talk contribs uploaded File:Developer ebeam v1.jpg
12:30, 13 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography/UVExposure/aligner inclinedUV (Created page with "==Inclined UV Lamp== 300x300px|right|thumb|Inclined UV lamp is placed in CX-1 The Inclined UV lamp is 1000 W Hg(Xe)lamp source designed for near UV, 350-450nm, mid UV, 260-320nm, and deep UV, 220-260nm exposures of resists and polymers. The exposure source can also be used to make an inclined exposure in air or in the media tank. The tool was purchased in February 2009 from Newport. The exposure lamp official name is Oriel Flood Exposur...")
11:24, 13 January 2026 User account Macolo talk contribs was created automatically
11:10, 13 January 2026 Jehem talk contribs created page File:ManualTMAHdeveloper uniformity v1.png
11:10, 13 January 2026 Jehem talk contribs uploaded File:ManualTMAHdeveloper uniformity v1.png
11:09, 13 January 2026 Jehem talk contribs created page File:ManualTMAHdeveloper developRate v1.png
11:09, 13 January 2026 Jehem talk contribs uploaded File:ManualTMAHdeveloper developRate v1.png
14:44, 12 January 2026 User account Yingan talk contribs was created automatically
11:37, 12 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography/Strip/plasmaAsher04 processDevelopment (Created page with "=Process gas ratio for plasma asher 4 & 5= 400px|thumb|Ashing rate as function of gas mix ratio when processing a single 100 mm wafer and when processing a full boat with 25 wafers. The green area (~50% N2) covers the optimum range for both situations.|right The ashing rate is related to the gas mix, usually expressed as percentage of nitrogen of the total amount of gas. Process development tests found that a gas mix of 50% nitrogen...")
11:20, 12 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography/Strip/wetBench06and07 (Created page with "=Overview of wet bench 06 and 07= {| class="wikitable" |- ! !! Resist Strip !! Lift-off |- ! scope=row style="text-align: left;" | Process | Wet resist strip || Metal lift-off process |- ! scope=row style="text-align: left;" | Chemical | Remover 1165 (NMP) || Remover 1165 (NMP) |- ! scope=row style="text-align: left;" | Process tempera...")
11:20, 12 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography/Strip/resistStrip (Created page with "=Resist Strip= 400px|thumb|Resist strip bench in D-3 This resist strip is only for wafers without metal and SU-8. There are one Remover 1165 bath for stripping and one IPA bath for rinsing. '''Here are the main rules for resist strip use:''' *Place the wafers in a wafer holder and put them in the first bath for 10 min, this time is depending how much resist you have on the surface. *After the strip rinse your wafers in the IPA bath for 2-3...")
11:18, 12 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography/Strip/plasmaAsher05 (Created page with "=Plasma Asher 5= 400px|thumb|Plasma asher 5 in cleanroom E-5.|right Product name: PVA Tepla Gigabatch 380M Year of purchase: 2024 The Plasma Asher 5 can be used for the following processes: *Photoresist stripping *Descumming *Surface cleaning *Removal of organic passivation layers and masks Furthermore plasma processing using CF4 in plasma asher 5 can be used for: *Etching of glass and ceramic *Etching of SiO2, Si3...")
11:18, 12 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography/Strip/plasmaAsher04 (Created page with "=Plasma Asher 4= 400px|thumb|Plasma asher 4 in cleanroom E-5.|right Product name: PVA Tepla Gigabatch 380M Year of purchase: 2024 The Plasma Asher 4 can be used for the following processes: *Photoresist stripping *Descumming *Surface cleaning *Removal of organic passivation layers and masks Plasma asher 4 has the following material restrictions: *No metals allowed *No metal oxides allowed *No III-V materials allowed The user manual, risk as...")
11:17, 12 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography/Strip/plasmaAsher03 (Created page with "=Plasma Asher 3: Descum= 400px|thumb|Plasma Asher 3: Descum is a low power plasma asher dedicated for descumming on smaller substrates. Product name: Diener Pico Plasma Asher Year of purchase: 2014 The Plasma Asher 3: Descum is dedicated for resist descum, i.e. removal of remains resist traces after development. It has a small chamber, so you can only load a single 100 mm substrate, or a few smaller pieces. In this machine, only Ox...")
11:14, 12 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography/Descum/plasmaAsher05 (Created page with "=Plasma Asher 5= Product name: PVA Tepla Gigabatch 380M Year of purchase: 2024 Plasma asher 5 is identical to plasma asher 4, see descum processing for plasma asher 4 here. ")
11:14, 12 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography/Descum/plasmaAsher04 (Created page with "=Plasma Asher 4= Product name: PVA Tepla Gigabatch 380M Year of purchase: 2024 Descum of AZ 5214E on 100 mm wafers. The descum process development was done for a single substrate, as well as 3 substrates (for decreased ashing rate and improved ashing uniformity). The substrates were placed vertically in the glass boat. <gallery style="text-align: center;" widths=250 heights=250> PA_boat_1Wafer_v2.png|Single vertical substrate PA_boat_3Wafer_v2.png|3 vertical substr...")
11:13, 12 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography/Descum/plasmaAsher03 (Created page with "=Plasma Asher 3: Descum= Product name: Diener Pico Plasma Asher Year of purchase: 2014 The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login''' Plasma Asher 3 is specifically used for controlled descum process after lithography. Please note that you only can process a single 100 mm wafer, or one small sample, at a t...")
11:09, 12 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography/LiftOff/liftoff wetbench07 (Created page with "=Lift-off wet bench 07= 300x300px|thumb|Lift-off wet bench in D-3 The user manual, and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=384 LabManager] - '''requires login''' {|border="1" cellspacing="1" cellpadding="10" style="text-align:left;" !colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment |style="background:WhiteSmoke; color:black";...")
10:45, 12 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseNaOH (Created page with "The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values. All doses are for standard silicon wafers, unless otherwise stated. Development is done using AZ 351B developer (NaOH) diluted 1:5. ===Aligner: MA6-1=== The Aligner: MA6-1 has an i-line...")
10:44, 12 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMasklessAligners (Created page with "The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose and achievable resolution for any given specific project, could be different from the listed values. All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH (AZ 726 MIF). ===Aligner: Maskless 01=== The Aligner:...")
10:41, 12 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMaskAligners (Created page with "==Exposure dose for mask aligners== The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values. All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH (AZ 726 MIF). ===Aligner: MA6-1=== The Align...")
10:23, 12 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography/Coaters/sprayCoater (Created page with "=Spray Coater= 400x239px|right|thumb|Spray Coater in Cleanroom C-1 The spray coater at DTU Nanolab is located in Cleanroom C-1. The machine is an ExactaCoat from Sono-tek which can be fitted with one of three different nozzles depending on the nature of the spray coating tasks at hand. The three different nozzles (Impact, AccuMist and Vortex) are optimized for different applications such as spray coating of large areas (e.g. entir...")
10:21, 12 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography//UVExposure/aligner inclinedUV (Created page with "==Inclined UV Lamp== 300x300px|right|thumb|Inclined UV lamp is placed in CX-1 The Inclined UV lamp is 1000 W Hg(Xe)lamp source designed for near UV, 350-450nm, mid UV, 260-320nm, and deep UV, 220-260nm exposures of resists and polymers. The exposure source can also be used to make an inclined exposure in air or in the media tank. The tool was purchased in February 2009 from Newport. The exposure lamp official name is Oriel Flood Exposure...")
10:16, 12 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography/UVExposure/aligner MLA4 (Created page with "== Aligner: Maskless 04 == 400px|thumb|Aligner: Maskless 04 is located in PolyFabLab in building 347. The logon password for the PC is "mla" (without quotation marks). The µMLA Tabletop Maskless Aligner from Heidelberg, located in PolyFabLab in building 347, is a direct exposure lithography tool installed in 2024. It is a UV exposure system, that exposes the patterns directly on photosensitive resists on chips, 2, 4, and 6 inch substrate...")
10:16, 12 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography/UVExposure/aligner MLA3 (Created page with "==Aligner: Maskless 03== 400px|thumb|Aligner: Maskless 03 is located in E-5. MLA150 WMII maskless aligner from Heidelberg Instruments GmbH, installed 2020. '''Special features:''' *Backside Alignment *Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate *Separate conversion PC (Power PC) Link to information about alignment mark design. '''[http...")
10:16, 12 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography/UVExposure/aligner MLA2 (Created page with "==Aligner: Maskless 02== 400px|thumb|Aligner: Maskless 02 is located in E-5. MLA150 WMII maskless aligner from Heidelberg Instruments GmbH (installed 2019 as WMI (0.6µm resolution), rebuilt to WMII 2023). '''Special features''' *Optical Autofocus *Backside Alignment *Basic Gray Scale Exposure *Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate *High Aspect Ratio Mode for exposure of thick resists *200 x...")
10:15, 12 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography/UVExposure/aligner MLA1 (Created page with "== Aligner: Maskless 01 == 400px|thumb|Aligner: Maskless 01 is located in E-4. The logon password for the PC is "mla" (without quotation marks). The MLA 100 Maskless Aligner located in the E-4 cleanroom is a direct exposure lithography tool installed in 2017. It is a UV LED exposure system, that exposes the patterns directly on photosensitive resists on chips, 2, 4, and 6 inch substrates, without prior fabrication of the mask. The sys...")
10:14, 12 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography/UVExposure/aligner MA6-2 (Created page with "==Aligner: MA6-2== 400px|thumb|The Aligner: MA6-2 is located in E-4. The Süss MicroTek Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, low vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microsc...")
10:13, 12 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography/UVExposure/aligner MA6-1 (Created page with "==Aligner: MA6-1== 400px|thumb|The Aligner: MA6-1 is located in PolyFabLab. SUSS Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alig...")
10:10, 12 January 2026 Jehem talk contribs created page File:Developer TMAH manual 02.jpg
10:10, 12 January 2026 Jehem talk contribs uploaded File:Developer TMAH manual 02.jpg
10:02, 12 January 2026 Jehem talk contribs created page Specific Process Knowledge/Lithography/Development/6inch developer (Created page with "==Developer-6inch== 300x300px|right|thumb|The Developer: 6inch bench is located in E-4 '''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Developers#Developer-6inch click here]''' ===This equipment will be decommissioned December 2019!=== The Developer: 6inch bench is an aut...")