Specific Process Knowledge/Lithography/Strip/PlasmaAsher2
The Plasma Asher 2 is the same as Plasma Asher 1 but has another loading system which is more convenient for batch loading of 6inch substrates.
In this machine, only O2 and N2 gases are used for processes (in PlasmaAsher1, CF4 is used as well).
The typical process parameters when operating the equipment:
- Photeresist stripping
Pressure: 0.8 - 1.0 mbar
Gas: O2
Power: 600 - 1000 watts
Time: 5 -30 min., depending on photoresist type and thickness
A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe 18.
A Descum process in manual mode: O2:70, N2:70, power:150W, time:10 min
Be sure to wait for cooling if the mashine has been used at 1000W right before. At a load at 2 Fused silica wafers resist removed 0.01-01,5um
The other materials have not been tested yet.
The user manual, user APV, and contact information can be found in LabManager - requires login
Process Information