Specific Process Knowledge/Thin film deposition/Depositionof NbTi

Comparison of LPCVD, PECVD, and sputter systems for silicon nitride deposition

	Sputter-System Metal-Nitride(PC3)	Lesker sputter system
Generel description	Pulsed DC reactive sputtering Reactive HIPIMS (high-power impulse magnetron sputtering) (require 3-inch target)	Reactive DC sputtering (not tested)
Stoichiometry	NbxTyN (Sputter-System Metal-Nitride(PC3)) Tunable composition	Unknown
Film thickness	Limited by process time. Deposition rate (0.18 nm/s) likely faster than Sputter-System (Lesker)	Limited by process time. Deposition rate unknown
Process temperature	Up to 600 °C	Up to 400 °C
Step coverage	Some step coverage possible	Some step coverage possible but amount unknown
Film quality	Deposition on one side of the substrate Properties including tunable stoichiometry (requires process development)	Deposition on one side of the substrate Unknown quality Likely O-contamination
Batch size	Many smaller samples Up to 10*100 mm or 150 mm wafers	Several smaller samples 1-several 50 mm wafers 1*100 mm wafers 1*150 mm wafer
Allowed materials	Almost any as long as they do not outgas and are not very toxic, see cross-contamination sheets	Almost any as long as they do not outgas and are not very toxic, see cross-contamination sheets