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Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride

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Scandium nitride (ScN)

Scandium nitride (ScN) is a rocksalt‑structure semiconductor with an indirect bandgap near 0.9 eV and a direct transition around 2.1 eV, combining high electron mobility, excellent thermal stability, and notable hardness in a chemically inert matrix. It is deposited by reactive magnetron sputtering for dense, textured films and by atomic layer deposition (ALD) when ultra-conformal, thickness-precise coatings are required on high-aspect-ratio or temperature-sensitive structures. In microelectronics, ScN functions as a diffusion barrier or seed layer, a lattice‑matched buffer for GaN/AlGaN power devices, and an emerging channel or contact material for high‑mobility transistors and thermoelectric modules. During reactive sputtering of AlN, elemental Sc is routinely co‑sputtered to form Al₁₋ₓScₓN, whose enhanced piezoelectric coefficients and ferroelectric phases enable next‑generation MEMS resonators, RF filters, and non‑volatile FeFET memories. Optically, ScN’s tunable plasma frequency supports near‑IR plasmonics, hot‑carrier photodetectors, and durable high‑temperature absorbers, while doped ScN shows adjustable n‑type conductivity and potential room‑temperature ferromagnetism for spintronic devices. Its high hardness, oxidation resistance, and decent thermal conductivity further suit ScN for protective coatings, MEMS layers, and thermoelectric power generators in harsh environments, underscoring its versatility across semiconductor, photonic, and engineering applications.

Deposition of Scandium Nitride

Deposition of ScN can only be done by reactive sputtering using Sc target.

The only tool for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is thoroughly documented and described in detail.:

At the moment (October 2023) we have a 4-inch Sc target (0.250" thick, bonded to Cu) for PC3 Src1.