Specific Process Knowledge/Thin film deposition/Deposition of Niobium Nitride
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Niobium nitride (NbN)
Niobium nitride (NbN) is a refractory ceramic best known for its relatively high superconducting critical temperature (~16 K), high hardness, chemical stability, and good electrical conductivity. It is typically deposited by reactive magnetron sputtering to obtain dense, uniform films. In semiconductor technology, NbN serves as a robust diffusion barrier/contact, a gate‑level metal compatible with advanced CMOS flows, and—thanks to its superconductivity—a key material for superconducting digital circuits and Josephson‑junction‑based qubits. Optically and in quantum photonics, ultrathin NbN is the workhorse material for superconducting nanowire single-photon detectors (SNSPDs), kinetic-inductance detectors, and low-loss microwave resonators; its tunable plasma frequency also supports mid-IR plasmonic and terahertz metamaterial devices. Beyond electronics and optics, NbN’s hardness and oxidation resistance make it a high-performance wear, diffusion-barrier, and corrosion-protection coating for cutting tools, MEMS, and harsh-environment sensors. Altogether, NbN combines superconductivity, mechanical robustness, and versatile deposition options—cementing its role across superconducting electronics, photonics, and demanding engineering applications.
Deposition of Niobium Nitride
Deposition of ScN can only be done by reactive sputtering using Nb target.
The primary tool for this application is the Cluster-Based, multi-chamber high-vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is thoroughly documented and described in detail.:
- Deposition of Niobium Nitride (NbN) using reactive p-DC sputtering in Sputter-System Metal-Nitride(PC3) Source 2 (3-inch target)
At the moment (July 2025) we have a 3-inch Nb target (0.250" thick) for PC1 and PC3.