Specific Process Knowledge/Lithography/Strip/plasmaAsher04

Plasma Asher 4

Plasma asher 4 in cleanroom E-5.

Product name: PVA Tepla Gigabatch 380M
Year of purchase: 2024

The Plasma Asher 4 can be used for the following processes:

• Photoresist stripping
• Descumming
• Surface cleaning
• Removal of organic passivation layers and masks

Plasma asher 4 has the following material restrictions:

• No metals allowed
• No metal oxides allowed
• No III-V materials allowed

The user manual, risk assessment, and contact information can be found in LabManager - requires login

Typical stripping parameters
Tested with 1.5 µm AZ 5214E on 100 mm silicon substrate.

• O₂: 100 sccm
• N₂: 100 sccm
• Pressure (DSC): 1.3 mbar
• Power: 1000 W
• Time (single wafer): 20-30 minutes
• Time (full boat): 90 minutes

Process development notes

Information about process development for plasma asher 04 and plasma asher 05 can be found here.