Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD

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At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.

Recipes on PECVD2 for deposition of silicon nitride and silicon oxynitride

Recipes

Recipe name	SiH4 flow [sccm]	NH3 flow [sccm]	N2 flow [sccm]	Pressure [mTorr]	Power [W]	Description
SINSTD80	30	20	1000	500	80
SINSTD96	30	20	1000	50	96
1SiN	40	20	1000	700	150

Expected results

Recipe name	Deposition rate [nm/min]	RI	Uniformity [%]	Stress [MPa]	BHF etch rate [Å/min]	Comments
SINSTD80	68nm/min (2014-07-07 JML)
SINSTD96
1SiN	Deposition rate in the middle of two wafers: 49nm/min+-1nm/min (2015-04-24 BGHE) In the middel: 72.6-76.4 nm/min (2014-08-13 BGHE) Variation over 3 wafers: 71.4-78.6 nm/min (2014-08-13 BGHE)		~2-4% (2015-04-24 BGHE) ~5% in the middel (4") (2014-08-13 BGHE) ~10% over 3 wafers (2014-08-13 BGHE)

Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride

Quality Controle (QC) for PECVD3

QC Recipe:	QCNITRIDE
SiH₄ flow	30 sccm
NH₃ flow	30 sccm
N₂ flow	1470 sccm
Pressure	650 mTorr
RF-power	LF: 30 W 2s HF: 20 W 6s

QC limits	PECVD3
Depoition rate	10.4 - 13.0 nm/min
Non-uniformity	<2.0 %
Refractive Index	1.909 - 2.028

Recipes

Recipe name	SiH4 flow [sccm]	NH3 flow [sccm]	N2 flow [sccm]	Pressure [mTorr]	Power [W]	Description
MFSiNLS	30	30	1470	650	20HF 6s 30LF 2s	Low stress nitride - standard recipe. The latest measured values can be seen in the process control sheet in LabManager.
LFSiN	30	15	1470	550	60LF	Compressive stress
HFSiN	30	42	1470	900	20HF	Tensile stress

LF=Low Frequency HF=High Frequency MF=Mixed Frequency SiN=Silicon Nitride LS=Low Stress

Expected results

Recipe name	Deposition rate [Å/min]	RI	Uniformity [%] [Std./mean]	Stress [MPa]	KOH etch rate [Å/min]	BHF etch rate [Å/min]
MFSiNLS	~107	~1.99	~4	~-30	~2.5	~250
LFSiN	~550	~1.96	~3	~-630	.	.
HFSiN	~130	~1.97	~2	~460	.	.

Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride. Expired!:PECVD1 has been decommissioned

Recipes

Recipe name	SiH4 flow [sccm]	NH3 flow [sccm]	N2 flow [sccm]	Pressure [mTorr]	Power [W]	Description
1nitride	30	20	1000	500	80
1nit_std	40	20	1960	550	60	Process control recipe

Expected results

Recipe name	Deposition rate [nm/min]	RI	Uniformity [%]	Stress [MPa]	BHF etch rate [Å/min]	Comments
1nitride
1nit_std	~32	1.89	~1		~700	The latest measured values can be seen in the process control sheet in LabManager