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Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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image:eves_XPS_ScN_PC3_Src1_RF_Sc_3s_fit_2031019.png|<b>Sc 3s</b> signal with fitted functions. Useful for stoichiometry calculation, due to the profile simplicity. The film has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
image:eves_XPS_ScN_PC3_Src1_RF_Sc_3s_fit_2031019.png|<b>Sc 3s</b> signal with fitted functions. Useful for stoichiometry calculation, due to the profile simplicity. The film has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
image:eves_XPS_ScN_PC3_Src1_RF_O_s1_fit_2031019.png|<b>O 1s</b> signal with fitted functions. The film has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
image:eves_XPS_ScN_PC3_Src1_RF_O_s1_fit_2031019.png|<b>O 1s</b> signal with fitted functions. The film has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
image:eves_XPS_ScN_PC3_Src1_RF_Sc2p_and_N1s_fit_2031019.png|Sc thin film XRR. Power: 150W, Deposition time: 750s, Pressure 3 mTorr. PC Gun Z-shift Position: Home (00.00 mm).
image:eves_XPS_ScN_PC3_Src1_RF_Sc2p_and_N1s_fit_2031019.png|<b>Sc 2p</b> and <b>N 1s </b> (in yellow) signals with fitted functions. Less useful for stoichiometry calculation, due to the profile complexity. N1s is dangerously close to Sc 2p, and need to be deconvolve. The film has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
image:eves_XPS_ScN_PC3_Src1_RF_N_s1_fit_2031019_new.png|Sc thin film XRR. Power: 150W, Deposition time: 750s, Pressure 3 mTorr. PC Gun Z-shift Position: Home (00.00 mm).
image:eves_XPS_ScN_PC3_Src1_RF_N_s1_fit_2031019_new.png|<b>N 1s </b> (in yellow) signal with fitted functions, where <b>Sc 2p</b> is also present (grey fitted area). Less useful for stoichiometry calculation, due to the profile complexity. N1s is dangerously close to Sc 2p, and need to be deconvolve. The film has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
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